Shielded piezoresistive cantilever probes for nanoscale topography and electrical imaging

Yang, Yongliang; Yue, Eric; Cui, Yong‐Tao; Haemmerli, A.; Lai, Keji; Kundhikanjana, Worasom; Harjee, Nahid; Pruitt, Beth L.; Kelly, Michael A.; Shen, Zhi‐Xun

doi:10.1088/0960-1317/24/4/045026

Cited by 8 publications

(6 citation statements)

References 16 publications

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“…[143][144][145] Dedicated probes, electrically shielded all the way down to the tip, are commercially available and facilitate reduced stray capacitances down to 10 −12 F (an example is displayed in Figure 3). [146][147][148] Due to the complexity of the problem, however, additional analytical or numerical calculations of the tip-sample interaction are usually necessary to extract accurate quantitative impedance information for the tip-sample system from the experimental data. [122,123,[149][150][151]…”

Section: (4 Of 18)mentioning

confidence: 99%

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional 2D systems for the development of next‐generation nanoelectronics. A major achievement in the field is the development of a fundamental framework that explains the emergence of enhanced electronic direct‐current conduction at the domain walls. Here, the much less explored behavior of ferroelectric domain walls under applied alternating‐current (AC) voltages is discussed. An overview of the recent advances in the nanoscale characterization is provided that allows for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo‐ to gigahertz regime. It is concluded with a discussion about the future direction of the field and novel application opportunities, expanding domain‐wall‐based nanoelectronics into the realm of AC technologies.

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Section: (4 Of 18)mentioning

confidence: 99%

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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“…sMIM was proposed by Lai et al and developing quickly these years [10,11,23,24]. It can detect many kinds of electrical properties of various samples (including conductors, semiconductors, insulators and other functional materials) at the micro/nano scale [14,[25][26][27][28][29][30][31][32][33][34][35]. Figure 1 illustrates the microwave electronics.…”

Section: Basic Principles and Experimental Setupmentioning

confidence: 99%

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM

Lei

et al. 2018

J. Phys. Commun.

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The characterization of mobile charge carriers of semiconductor materials has spurred the development of numerous two dimensional carrier profiling tools. Here, we investigate the mobile charge carriers of several samples by multi-harmonic electrostatic force microscopy (MH-EFM) and scanning microwave impedance microscopy (sMIM). We present the basic principles and experiment setups of these two methods. And then several typical samples, i.e. a standard n-type doped Si sample, mechanical exfoliation and chemical vapor deposition grown molybdenum disulfide (MoS 2 ) layers are systemically investigated by sMIM and MH-EFM. The difference and (dis)advantages of these two modes are discussed. Both modes can provide carrier concentration profiles and have sub-surface sensitivity. They also have advantages in sample preparation in which contact electrodes are not required and insulating or electrically isolated samples can readily be studied. The basic mode, physics quantities extracted, dielectric response form and parasitic charges in scanning environment result in difference in experiment results for these two kinds of methods. The techniques described in this study will effectively promote research on basic science and semiconductor applications.

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“…Sensitivity Fabrication in a GaN nanowire probe [40] Improve sensitivity and alleviate the need to re-calibrate the system frequently a fully integrated CMOS-MEMS SMM [59] Improve the signal to noise ratio and maximize the sensitivity Resolution a silicon donor nanostructure design for STM [55] Quantify the resolution limit of sMIM Wideband a piezoresistive cantilever with a low-impedance conduction line to electrically-shielded tip [36] Resolution of 3.5 nm in a measurement bandwidth from 1 HZ to 10 kHz Measurement conditions a compact mode microwave impedance imaging [32] Tip wear and sample drag are greatly reduced a novel batch-processed low impedance, well-shielded and sharp tips piezoresistive cantilever probes [46] MIM capability at both room and cryogenic temperatures SMM integrated into a scanning electron microscope and a focused ion beam (SEM/FIB) instrument [53] The automated operation of nanoobjects goes a step further the CMOS-MEMS SMM system. The block diagram of the complete SMM system includes the tip of the sample being tested, the SMM device fabricated using CMOS-MEMS technology, the matching network, and the measurement circuit [60].…”

Section: Different Techniques Resultsmentioning

confidence: 99%

“…In Ref. 46, the authors reported a new type batch-processed low impedance, well-shielded and sharp tips piezoresistive cantilever probes for simultaneously topographical and electrical scanning probe microscopy. The integration of a piezo resistor on MIM probes is a challenging task [47][48][49].…”

Section: Improvement Of Scanning Microwave Impedance Microscopymentioning

confidence: 99%

Developments and Recent Progresses in Microwave Impedance Microscope

et al. 2020

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Microwave impedance microscope (MIM) is a near-field microwave technology which has low emission energy and can detect samples without any damages. It has numerous advantages, which can appreciably suppress the common-mode signal as the sensing probe separates from the excitation electrode, and it is an effective device to represent electrical properties with high spatial resolution. This article reviews the major theories of MIM in detail which involve basic principles and instrument configuration. Besides, this paper summarizes the improvement of MIM properties, and its cutting-edge applications in quantitative measurements of nanoscale permittivity and conductivity, capacitance variation, and electronic inhomogeneity. The relevant implementations in recent literature and prospects of MIM based on the current requirements are discussed. Limitations and advantages of MIM are also highlighted and surveyed to raise awareness for more research into the existing near-field microwave microscopy. This review on the ongoing progress and future perspectives of MIM technology aims to provide a reference for the electronic and microwave measurement community.

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Shielded piezoresistive cantilever probes for nanoscale topography and electrical imaging

Cited by 8 publications

References 16 publications

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM

Developments and Recent Progresses in Microwave Impedance Microscope

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