Shift and broadening of surface polaritons of sapphire upon deposition of a quasicrystalline film

Новикова, Н. Н.; Ol’shanskii, E. D.; Teplov, A. A.; Shaitura, D. S.; Yakovlev, V. A.

doi:10.1134/s1063783412030213

Cited by 4 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The factor of three takes into account that we are here considering a linear Grü neisen parameter instead of the volume parameter considered by Frenkel & Rehr (1993). The volume Grü neisen parameter of CdTe evaluated at 300 K from the experimental coefficient of lattice thermal expansion, specific heat and compressibility is 0.6 (Novikova, 1961;Smith & White, 1975); the same value has been recently obtained by ab initio lattice dynamics calculations (Wang et al, 2014). To compare this value with the bond Grü neisen parameter of Fig.…”

Section: Figurementioning

confidence: 77%

On EXAFS Debye-Waller factor and recent advances

2015

View full text Add to dashboard Cite

The effects of structural and vibrational disorder on the EXAFS signals are parameterized in terms of the Debye Waller (DW) factor. Here the vibrational contribution is addressed, which for most systems can be singled out by studying the temperature dependence of the EXAFS DW factor, which corresponds to a good accuracy to the parallel mean square relative displacement (MSRD) around the inter-atomic equilibrium distance. By comparing the first-shell EXAFS thermal expansion with the crystallographic thermal expansion one can evaluate the perpendicular MSRD. The results of recent measurements on copper and on several tetrahedral semiconductors are here critically compared and some properties of the MSRDs are discussed, such as the dependence of correlation, force constants and vibrational anisotropy on crystal structure and bond ionicity as well as the relative merits of the correlated Debye and Einstein models. The anharmonic contribution to the parallel MSRD of CdTe has been evaluated and a quasi-harmonic analysis has been attempted, leading to an estimation of the bond Grü neisen parameter.

show abstract

Section: Figurementioning

confidence: 77%

On EXAFS Debye-Waller factor and recent advances

2015

View full text Add to dashboard Cite

show abstract

“…2 and 3. Negative values of Δ R should therefore be expected for each distance, corresponding to the materials’ thermal contraction at LN 2 temperature, 52,53 barring anomalous vibrational effects on the EXAFS. 54–56 N i for each path was set to its known crystallographic value: N 1 = 4, N 2 = 12, and N 3 = 12.…”

Section: Fitting Resultsmentioning

confidence: 96%

Revisiting the K-edge X-ray absorption fine structure of Si, Ge–Si alloys, and the isoelectronic series: CuBr, ZnSe, GaAs, and Ge

Shirley

Woicik

2022

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…One possible factor is the mismatch in the coefficients of thermal expansion (CTE) between GaAs and HfO 2 . GaAs has a linear CTE of 5.73 Â 10 À6 C À1 for temperatures above 100 C, 11 while the average linear expansion coefficient of HfO 2 is 4.4 Â 10 À6 C À1 in the 25-1000 C temperature range. 12 Assuming a stress free state at the deposition temperature of 200 C, the annealing process should induce tensile stresses in the HfO 2 but not compressive ones, as observed in practice.…”

Section: Resultsmentioning

confidence: 99%

Thermal stability of HfO2-on-GaAs nanopatterns

et al. 2012

View full text Add to dashboard Cite

We have evaluated the effect of thermal annealing on the morphology, crystalline phase and elemental composition of high-k dielectric HfO(2)-on-GaAs nanopatterns at 500-620 °C by using atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). While the HfO(2)-GaAs interface continues to be atomically abrupt at 620 °C, we have found a gradual shrinkage in the pattern linewidth and period with increasing temperature. Facet formation triggered by a nanoscale-modulated sequence of tensile and compressive stresses on the GaAs substrate, observed at 620 °C, has been attributed to a volumetric expansion of the HfO(2) nanostructures, caused by the tetragonal/cubic to monoclinic HfO(2) phase transformation and, to a lesser extent, by solid-state diffusion of As into HfO(2).

show abstract

Shift and broadening of surface polaritons of sapphire upon deposition of a quasicrystalline film

Cited by 4 publications

References 9 publications

On EXAFS Debye-Waller factor and recent advances

On EXAFS Debye-Waller factor and recent advances

Revisiting the K-edge X-ray absorption fine structure of Si, Ge–Si alloys, and the isoelectronic series: CuBr, ZnSe, GaAs, and Ge

Thermal stability of HfO2-on-GaAs nanopatterns

Contact Info

Product

Resources

About