2004
DOI: 10.1016/j.physc.2003.09.068
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Shift of the surface-barrier part of the irreversibility line due to columnar defects in Bi2Sr2CaCu2O8 thin films

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“…1 Readings are taken at 25 K. the crystal structure of films changes slightly during the bombardment with a low-energy ion beam. This fact is an advantage of the low-energy irradiation over the highenergy one since the latter leads to the destruction of the near-surface layer of a sample and, as a consequence, to the drastic decrease of the critical temperature T c [14,15]. The other positive results are the critical current density increase and the MWA IL shift towards the higher temperatures after the ion irradiation with the dose of 5 · 10 11 ion/cm 2 .…”
Section: Model Of the Evolution Of Radiation Defectsmentioning
confidence: 99%
“…1 Readings are taken at 25 K. the crystal structure of films changes slightly during the bombardment with a low-energy ion beam. This fact is an advantage of the low-energy irradiation over the highenergy one since the latter leads to the destruction of the near-surface layer of a sample and, as a consequence, to the drastic decrease of the critical temperature T c [14,15]. The other positive results are the critical current density increase and the MWA IL shift towards the higher temperatures after the ion irradiation with the dose of 5 · 10 11 ion/cm 2 .…”
Section: Model Of the Evolution Of Radiation Defectsmentioning
confidence: 99%