Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(ZrxTi1–x)O3 Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Sun, Wei; Yu, Qi; Li, Jiangyu; Li, Jing‐Feng

doi:10.1021/acs.jpcc.5b05423

Cited by 15 publications

(12 citation statements)

References 33 publications

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“…On the other hand, the texturing resulting from the LNO seed layer will stabilize the rhombohedral structure due to the similarity in the lattice parameters between LNO ( R 3 c , 3.837 Å) and BiFeO 3 ( R 3 c , 3.965 Å). A similar effect (ie, the disturbance of the phase boundaries due to strain) has been reported previously, for example, the rhombohedral‐tetragonal phase boundary in epitaxial Pb(Zr, Ti)O 3 on (111) SrTiO 3 substrates was shifted to the PbTiO 3 side compared to the bulk material as a result of the substrate constraint 46 . As a result, the R‐O phase boundary was more diffuse in the textured samples than in the nontextured samples.…”

Section: Resultssupporting

confidence: 78%

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Qiu

Zhang

et al. 2020

J Am Ceram Soc

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The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi1‐xSmxFeO3 thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, that is, x = 0, 0.1, 0.12, 0.14, and 0.16) were fabricated using the sol‐gel process by introducing a LaNiO3 (LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping‐induced R‐O phase transition of the BiFeO3 thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the nontextured polycrystalline films, resulting in an R‐O phase boundary at x = 0.12. In contrast, the R‐O phase boundary in the textured films was more diffuse, indicating a two‐phase coexistence in a boarder range of Sm doping levels (x = 0.12‐0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the nontextured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.

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Section: Resultssupporting

confidence: 78%

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Qiu

Zhang

et al. 2020

J Am Ceram Soc

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“…Details of SS-PFM mode can be found elsewhere [23]. The piezoelectric responses manifest butterfly loops as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Reversible phase transition induced large piezoelectric response in Sm-doped BiFeO3 with a composition near the morphotropic phase boundary

et al. 2017

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Materials with the morphotropic phase boundary (MPB) exhibit an ultrahigh mechanical response to electrical inputs, which has been widely used in applications such as sensors and actuators. Recently, the rare-earth element doped BiFeO 3 (BFO) was found to possess a MPB between a rhombohedral polar phase and an orthorhombic antipolar phase with enhanced piezoelectric response, enabling it to be an attractive alternative to toxic Pb-based piezoelectric materials. Despite theoretical and experimental efforts, the phase transition behavior under electric fields has not been directly confirmed, leaving a gap in the understanding of the origin of enhanced piezoelectricity. Here, we have demonstrated an irreversible electric-field induced phase transition from the antipolar phase to the polar phase in Sm doped BFO with the pre-MPB composition, and a reversible phase transition between the polar phase and the antipolar/nonpolar phase in Sm doped BFO with the MPB composition. In situ transmission electron microscopy (TEM) technique combined with thermodynamic calculation based on the Ginzburg-Landau-Devonshire theory indicates that the electric field induced reversible phase transition leads to the enhanced piezoelectric response and the double P-E hysteresis loops. These results provide us a deep insight into the mechanism of exotic electromechanical response in rare-earth element doped BFO system with the composition near the MPB.

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“…In Figure b, the amplitude hysteresis loops measured under “off” state display a typical “butterfly shape”. The value of the amplitude [max] was acquired, which was divided by applied ac voltage (2 V) to deduce the local piezoelectric coefficient, d max that represents the piezoresponse after applied dc electrical poling. , To reveal the differences in both piezoresponse and coercive voltage more precisely, the statistical d max and E c values of [001]PTO films and [101]PTO nanostructures are all shown in Figure c. It is found that the [101]PTO nanostructures exhibit a higher d max value and a lower coercive voltage, indicating that the [101]PTO nanostructures manifest a superior piezoelectric response and an easier ferroelectric switching behavior.…”

Section: Results and Discussionmentioning

confidence: 99%

Crystallographic Orientation and Surface Charge-Tailored Continuous Polarization Rotation State in Epitaxially Ferroelectric Nanostructures

et al. 2019

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The multiple polarization states driven by polarization rotation could trigger giant piezoelectric responses in electromechanical sensors. Theoretically and experimentally, polarization rotation in ferroelectrics was contentiously reported in PbTiO 3 thin films, which may result from low symmetric phases, flexoelectricity, or interfacial oxygen octahedral coupling. In this work, 5 nm PbTiO 3 was grown on SrRuO 3 -buffered (001)-and ( 101)-oriented SrTiO 3 substrates. By using piezoresponse force microscopy and (scanning) transmission electron microscopy, self-assembled PbTiO 3 nanostructures with a triangularprism-shaped morphology (average width about 30 nm) were observed on the (101)-oriented SrTiO 3 substrate. Particularly, continuous polarization rotation state was confirmed in each PbTiO 3 nanostructure, where the rotation angle is up to 90°approximately from the left side to the right side. In collaboration with phase-field simulations, it is proposed that the surface positive charge accumulation facilitates the formation of continuous polarization rotation. Piezoresponse force microscopy measurements indicate that these [101]PbTiO 3 nanostructures with polarization rotation display a superior piezoelectric response compared with the [001]PbTiO 3 thin film. These results not only shed light on understanding the polarization rotation mechanism in ferroelectrics but also are expected to provide useful information for developing the high performance of electromechanical devices.

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Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(Zr_xTi_1–x)O₃ Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Cited by 15 publications

References 33 publications

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Reversible phase transition induced large piezoelectric response in Sm-doped BiFeO3 with a composition near the morphotropic phase boundary

Crystallographic Orientation and Surface Charge-Tailored Continuous Polarization Rotation State in Epitaxially Ferroelectric Nanostructures

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Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(ZrxTi1–x)O3 Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Cited by 15 publications

References 33 publications

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO3 thin films on LaNiO3‐buffered silicon

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO3 thin films on LaNiO3‐buffered silicon

Reversible phase transition induced large piezoelectric response in Sm-doped BiFeO3 with a composition near the morphotropic phase boundary

Crystallographic Orientation and Surface Charge-Tailored Continuous Polarization Rotation State in Epitaxially Ferroelectric Nanostructures

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Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(Zr_xTi_1–x)O₃ Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO₃ thin films on LaNiO₃‐buffered silicon