Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques

Su, Xujun; Xu, Kun; Xu, Yang; Ren, Guoqiang; Zhang, J. C.; Wang, J. F.; Yang, Hua

doi:10.1088/0022-3727/46/20/205103

Cited by 23 publications

(16 citation statements)

References 29 publications

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“…There are two kinds of laser sources for LDT to deal with substrates including the frequency‐tripled Nd:YAG laser centered at 355 nm and the KrF‐pulsed excimer laser with the wavelength of 248 nm. [ 27–30 ] Compared with the KrF excimer laser, the Nd:YAG laser has a lower absorption coefficient and a shorter pulse duration, which can cause much more dislocations in the bulk region and fine superficial structure. Therefore, the 355 nm laser was the best candidate as laser source for the LDT.…”

Section: Resultsmentioning

confidence: 99%

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Zhang

et al. 2020

Physica Status Solidi (a)

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The lack of high-quality gallium nitride (GaN) wafers may be a non-negligible bottleneck restricting the development of GaN-based devices. Although various processing methods have been used to reduce dislocation density, there is still plenty of room for the reduction of stress in GaN crystal. Herein, laser decomposition is verified as an efficient technique to reduce the interfacial stress in GaN-sapphire and improve the lateral epitaxial growth quality of GaN crystal. The variation of the stress on surface and at a depth of 2 μm by controlling the incident pulse energy is systematically studied and the physical mechanism of laser decomposition process is discussed. As the incident energy increases, the stress is weakened within a certain range. Experimental evidences of the good growth quality are displayed by the investigation of high-resolution X-ray diffraction, electron backscattered diffraction, and photoluminescence. Furthermore, high-quality UV photodetectors based on the as-obtained GaN are fabricated successfully, which show a strong photocurrent response and excellent stability. This work may pave a way towards improving crystal growth and provides a new insight for tuning interface stress so as to develop desired devices.

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Section: Resultsmentioning

confidence: 99%

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Zhang

et al. 2020

Physica Status Solidi (a)

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“…6. As a result of exposure to each laser pulse, GaN was decomposed and microcracks appeared, going at a shallow angle into the GaN film being detached [13,21]. Because of this, the surface of the sample from which the film was detached had irregularities in the form of ordered craters (see Fig.…”

Section: Resultsmentioning

confidence: 99%

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates

et al. 2016

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“…Рассчитанная пороговая плотность энергии составила 1.6 ± 0.5 Дж/см 2 . Получен-ное значение пороговой плотности энергии превышает значение 0.6 Дж/см 2 , полученное в работах, посвящен-ных лазерному отделению GaN от подложек сапфира с помощью УФ лазера [5,7,9].…”

Section: отделенные пленки Gan и сапфировые подложкиunclassified

“…Из рис. 5, a и b видно, что после зоны диссоциации появляется трещина, имеющая как латеральную, так и вертикаль-ную составляющую, из-за которой трещина уходит в глубь пленки [7,9]. Близкое расположения полостей ограничивает распространение трещин, что приводит к формированию шестигранных лунок на подложке и микролинз на отделенной пленке (рис .…”

Section: отделенные пленки Gan и сапфировые подложкиunclassified

Отделение слабо легированных пленок n-GaN микронной толщины от подложек, основанное на эффекте поглощения ИК излучения в сапфире

Voronenkov¹,

Virko²,

Kogotkov³

et al. 2017

Физика И Техника Полупроводников

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Сильное поглощение излучения СО2-лазера в сапфире использовано для отделения пленок GaN от темплейтов GaN на сапфире. Лазерное сканирование сапфировой подложки приводило к термической диссоциации GaN на интерфейсе GaN/сапфир и отделению пленки GaN от сапфира. Пороговая плотность энергии лазерного излучения, при которой начиналась диссоциация n-GaN, составила 1.6±0.5 Дж/см2. Изучено распределение механических напряжений и поверхностная морфология пленок GaN и сапфировых подложек до и после лазерного отделения методами рамановской спектроскопии, атомно-силовой микроскопии и растровой электронной микроскопии. Образец вертикального диода Шоттки с величиной плотности прямого тока 100 А/см2 при напряжении 2 B и максимальным обратным напряжением 150 В изготовлен на основе отделенной пленки n-GaN толщиной 9 мкм. DOI: 10.21883/FTP.2017.01.8325

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Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques

Cited by 23 publications

References 29 publications

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates

Отделение слабо легированных пленок n-GaN микронной толщины от подложек, основанное на эффекте поглощения ИК излучения в сапфире

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