Short circuit characterization of 3<sup>rd</sup> generation 10 kV SiC MOSFET

Ji, Shiqi; Laitinen, Marko; Huang, Xingxuan; Sun, Jingjing; Giewont, Bill; Tolbert, Leon M.; Wang, Fred

doi:10.1109/apec.2018.8341410

Cited by 18 publications

(7 citation statements)

References 11 publications

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“…One recommendation is to connect a voltage probe through a BNC connector [46] to the printed circuit board of the tester, which can also suppress noise interference. Another recommendation is to measure the drain current ID using a nonintrusive (not interfering with the main NDT) Rogowski coil [38], as explicitly indicated in Fig. 4, together with voltage probes.…”

Section: B Design Criteria For Main Componentsmentioning

confidence: 99%

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Cui

Xin

Liu

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This paper, therefore, presents an overview of related research methods aiming to meet that objective. Topics reviewed include the non-destructive tester (NDT) used to implement SC faults, extraction and analysis of degradation parameters, and failure analysis of SiC MOSFETs. Concerning the NDT, its design criteria and methods for evaluating SC robustness are discussed. After which, key parameters used to assess SC reliability and methods for investigating degradation mechanisms are discussed and summarized. Finally, failure analysis techniques and their contributions to failure mechanisms are reviewed.

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Section: B Design Criteria For Main Componentsmentioning

confidence: 99%

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Cui

Xin

Liu

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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“…In [9], short circuit measurements were performed on 3.3kV/400A SiC MOSFET modules and showed reduced SCWT (3 µs) compared to silicon IGBT modules. Short circuit measurements have also been performed on 10 kV SiC MOSFETs with 6kV DC link voltages [10]. The results showed a SCWT of 1.5 µs.…”

Section: Introductionmentioning

confidence: 99%

A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs

Alatise¹,

Erfan²,

Wu³

et al. 2022

IET Conf. Proc.

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Short circuits that occur in power converters put the power semiconductor devices under considerable electrothermal stress. The electrothermal stress causes a rise in junction temperature and ultimately device failure if the thermal limits of the device are exceeded. The device ruggedness under short circuit conditions is quantified by the short circuit withstand time (SCWT), which is the maximum duration the power device can dissipate the short circuit energy without failure. SiC MOSFETs are known to have reduced short circuit capability compared to comparatively rated silicon MOSFETs and IGBTs due to higher thermal impedance and reduced gate oxide robustness. In this paper, 650V rated SiC planar MOSFETs, Trench MOSFETs and Cascode JFETs have been subjected to short circuits with initial junction temperatures of 25°C, 75°C and 150°C. The results show the peak SC energy density (in mJ/mm 2 ) has a negative temperature coefficient for the Planar and Trench MOSFETs and is temperature independent for the Cascode JFET. The SCWT reduces with initial junction temperature for the SiC Planar and Trench MOSFET while showing less temperature dependency in the SiC Cascode JFET. The SiC Trench MOSFET demonstrates the highest SCWT although all devices show reduced SCWT compared to similarly rated silicon MOSFETs and IGBTs.

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“…SiCs have higher voltage and lower switching loss per unit area, which makes them more suitable for application in traction converter systems and power transmission systems [3]. In addition, SiC has lower output capacitance and gate charge and can be switched at higher rates of change of voltage and current [4]. The high switching speed, low switching loss, and high switching frequency of SiC improve the power density and efficiency of power systems.…”

Section: Introductionmentioning

confidence: 99%

Design of a Fan-Out Panel-Level SiC MOSFET Power Module Using Ant Colony Optimization-Back Propagation Neural Network

Qian

Hou

Fan

et al. 2021

IEEE Trans. Electron Devices

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A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and embedded chip technologies. To achieve the more effective thermal management and higher reliability under thermal cycling, a new optimization method called Ant colony optimization-back propagation neural network (ACO-BPNN) was developed for optimizing SiC modules, and contrast it with the Response Surface Method (RSM). First, the heat dissipations of SiC MOSFET with different redistribution layer (RDL) materials were simulated through the ANSYS finite element simulation. Then, the RSM was adopted to design the experiments for optimization. Third, the optimized design considering both junction temperature and thermal-mechanical stress is obtained using RSM and ACO-BPNN. The results show that: 1) compared with nanosilver, copper has a relatively good heat dissipation effect, but nano-silver has a better thermodynamic performance, and 2) ACO-BPNN can provide more accurate optimization Manuscript

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Short circuit characterization of 3^rd generation 10 kV SiC MOSFET

Cited by 18 publications

References 11 publications

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs

Design of a Fan-Out Panel-Level SiC MOSFET Power Module Using Ant Colony Optimization-Back Propagation Neural Network

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Short circuit characterization of 3rd generation 10 kV SiC MOSFET

Cited by 18 publications

References 11 publications

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs

Design of a Fan-Out Panel-Level SiC MOSFET Power Module Using Ant Colony Optimization-Back Propagation Neural Network

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Short circuit characterization of 3^rd generation 10 kV SiC MOSFET