Short-circuit measurement by Seebeck current detection of a single thermocouple and its application

Lee, Seung Seoup; Kimura, Masaaki

doi:10.1016/j.sna.2007.04.045

Cited by 12 publications

(4 citation statements)

References 5 publications

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“…Such assumptions, however, require the verification that the causal and linear relationship between Δ T and Δ V is maintained over a long period of bj‐PG's activity time. Such verification is missing in the current literature . Therefore, this work studies the interaction between CB‐IR radiation and a bj‐PG over time.…”

Section: Introductionmentioning

confidence: 94%

“…Visible light, IR, and microwave radiation transfer heat radiatively. Due to the association between radiation and heat, bj‐PGs are largely used to exploit the SE in thermopiles useful for IR radiation detection, power measurements, thermal imaging, temperature sensors, and energy‐harvesting devices . In these applications, a large variety of sources, from common broadband sources to lasers, are employed to activate the bj‐PGs .…”

Section: Introductionmentioning

confidence: 99%

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Infrared power generation in an insulated compartment

et al. 2013

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The mechanism that activates a bi-junction power generator under the effects of heat is the Seebeck effect, that is, the production of voltage difference DV(t) is directly proportional to the temperature difference DT(t) between the ''hot'' and ''cold'' junctions of the device. This phenomenon is well established and is known as thermoelectric power generation. Here, it is shown that, instead, the causal and linear relationship between DV(t) and DT(t) is lost when continuous broadband infrared (CB-IR) radiation illuminates a bi-junction power generator in an insulated compartment. The observed phenomenon is IR power generation. Heat transfer calculations fail in explaining the experimental trends. The interaction between CB-IR radiation and the charge carriers in the bi-junction power generator might play a role in the DV(t) production, depending upon the geometry of the experimental setup. The longitudinal propagation of collective oscillations, for example, polaritons, in the plates protecting the ''hot'' and ''cold'' junctions of the bi-junction power generator could explain the DV(t) production and the characteristic time constants. The findings should be considered in the design, fabrication, and improvement of thermopiles, power meters, and IR energy-harvesting devices.

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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“…For the practical application of TE materials, reliable, accurate and consistent measurements of these two are necessary. In the literature, along with many earlier reports [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], there is recently published research [22][23][24][25][26][27] concerning the TEP and/or resistivity measurements of bulk materials providing their capabilities and limitations of measurement systems. A recent detailed overview of the challenges and influence of TE metrology on bulk materials for a high temperature range has been given by Martin et al [26].…”

Section: Introductionmentioning

confidence: 99%

An instrument for the high temperature measurement of the Seebeck coefficient and electrical resistivity

Gunes

Parlak

Özenbaş

2014

Meas. Sci. Technol.

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A system for the simultaneous measurement of thermoelectric power and resistivity of one and/or two samples over a temperature range of 300–1000 K in a vacuum chamber is designed and implemented. A sample probe is developed to provide its easy mounting and usage. In addition, two samples can be measured at the same time. Measurement accuracy has been enhanced by beadless thermocouples and micro-heaters that are specifically designed in order to minimize the ‘cold-finger effect’ and to eliminate some possible source of contact, design and measurement errors. A broad range of physical types and shapes of samples, such as bulk, bar or disc, can be measured by a software controlled system. A differential steady-state method has been applied for Seebeck coefficient measurement. Resistivity measurement is conducted with the axial technique of the four-point probe method. Platinum wire and a niobium rod are chosen as the standard samples. The total data error for the Seebeck coefficient and resistivity measurements is estimated to be less than 2.6% and 1%, respectively.

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“…As an on-chip temperature sensor, a p-n junction diode and a thin-film thermocouple have often been utilized. (17,18) Despite the importance for silicon resonator devices, compensation techniques have not been reported often. Harada et al have reported that an external temperature sensor was employed to integrate commercial pressure sensors using a silicon resonant strain sensor.…”

Section: Introductionmentioning

confidence: 99%

Integration of p-n Junction Diode to Cantilever Mass Sensor for Frequency Drift Compensation due to Temperature Fluctuation

2011

Sensors and Materials

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Silicon resonant sensors generally show frequency drift due to temperature fluctuation. A p-n junction diode was integrated to a resonant mass sensor using a silicon cantilever in one chip for frequency drift compensation due to temperature fluctuation. The diode could be fabricated by almost the same fabrication process simultaneously with piezoresistive stress gauges and showed good p-n junction characteristics for a temperature sensor. The sensor chip consisted of multiple cantilevers and the diode was assembled to a sensor package with a PZT vibrator and oscillated using a feedback electric circuit. Frequency drift trends under induced temperature changes could be almost compensated using the temperature read by the on-chip diode and a temperature coefficient. The temperature coefficients were −34 and −78 ppm/°C for gold-coated and polybutadiene-coated cantilevers, respectively, and found to de pend strongly on the surface adsorption films on the sensor. Frequency drift compensation under a chemical sensing situation was also demonstrated, which was reduced from the origi nal drift up to 30 Hz to almost 2 Hz. Temperature compensation using an on-chip temperature sensor is considered to be important for chemical sensing using silicon cantilevers where gas flows can easily change the temperature of the sensor.

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Short-circuit measurement by Seebeck current detection of a single thermocouple and its application

Cited by 12 publications

References 5 publications

Infrared power generation in an insulated compartment

Infrared power generation in an insulated compartment

An instrument for the high temperature measurement of the Seebeck coefficient and electrical resistivity

Integration of p-n Junction Diode to Cantilever Mass Sensor for Frequency Drift Compensation due to Temperature Fluctuation

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