Short Circuit Ruggedness of Trench Filled Superjunction Devices

Sharma, Shubhankar; Zheng, Yi; Wong, Hiu Yung

doi:10.1109/laedc54796.2022.9908223

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…The large amount of the nonequilibrium carriers' stored charge (Q rr ) and the extremely fast reverse recovery current change rate (d i /d t ) limit the application of the SJ MOSFET in high-frequency inductive circuits [4]. Moreover, the trench etch backfilling (TEB) and multilayer epitaxial deposition (MED) are two commonly used processes for fabricating the pillar region of the SJ MOSFET [5,6]. The TEB process can build a more uniform N/Ppillar morphology, which realizes a better trade-off between the BV and R on,sp of the SJ MOSFET [7].…”

Section: Introductionmentioning

confidence: 99%

Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

Liu

Tan

et al. 2023

Electronics

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This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (dir/dt) from a peak to zero. The simulation results show that the reverse recovery peak current (Irrm) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.

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