Short notes: Effect of hydrostatic pressure up to 12 kbar on the electrical resistance of Y0.77Pr0.23Ba2Cu3O7−δ single crystals

Abstract

The effect of high hydrostatic pressure up to 12 kbar on the electrical resistivity in the basal ab plane of an optimally doped Y0.77Pr0.23Ba2Cu3O7−δ single crystal was studied. An inhomogeneity of the sample is found that does not depend on the applied pressure, P. The Tc(P) dependence increases nonlinearly with increasing P, and the value of the baric derivative, dTc/dP, decreases. Possible mechanisms of the effect of high pressure on Tc are discussed, taking into account the presence of features in the electronic spectrum of charge carriers.