Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Novikov, Yu. N.; Gritsenko, V. V.

doi:10.1063/1.3606422

Cited by 29 publications

(20 citation statements)

References 19 publications

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“…Nevertheless, direct evidence of the existence of Si clusters with small sizes as well as their spatial distribution in the oxide or nitride matrices are not provided in their works. 16,18 In order to quantitatively confirm the validity of this "intermediate" model for our film structures, we carried out EELS measurements in an aberration-corrected STEM. The advantage of this experimental setup is that the scanned electron probe is sub-angstrom in size, and therefore the chemical and electronic structure information is obtained on an atomic scale.…”

Section: Methodsmentioning

confidence: 87%

“…The experimental Si 2p spectrum of sample SN3, however, can be fitted almost perfectly with the RBM, suggesting that the film comprises five types of tetrahedra, as shown in Figure 4 and Table II. 16,18 Instead, they proposed an intermediate model, according to which the SiN x and SiO x structures comprise five types of tetrahedral units, as in the RBM, but for which the probability of finding a given tetrahedron type is not described by the RBM. The intermediate model is based on the assumption that there is a phase separation in the nitride or oxide matrices including Si clusters, sub-oxide and SiO 2 , or sub-nitride and Si 3 N 4 matrices.…”

Section: Methodsmentioning

confidence: 99%

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Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

Nguyen

Kepaptsoglou

Ramasse

et al. 2012

Journal of Applied Physics

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Structure determination of thin CoFe films by anomalous x-ray diffraction J. Appl. Phys. 112, 074903 (2012) Surface wettability of titania thin films with increasing Nb content J. Appl. Phys. 112, 073502 (2012) Multi-scale order in amorphous transparent oxide thin films J. Appl. Phys. 112, 054907 (2012) Growth of continuous and ultrathin platinum films on tungsten adhesion layers using atomic layer deposition techniques Appl.The atomic structure and optical properties of Si-rich silicon nitride thin films have been for decades the subject of intense research, both theoretically and experimentally. It has been established in particular that modifying the chemical composition of this material (e.g., the Si excess concentration) can lead to dramatic differences in its physical, optical, and electrical properties. The present paper reports on how the incorporation of oxygen into silicon nitride networks influences their chemical bonding and photoluminescence properties. Here, by using a combination of analytical scanning transmission electron microscopy and x-ray photoelectron spectroscopy it is demonstrated that the structure of Si-rich silicon nitride with low O content can be described by the co-existence of Si nanocrystals in a Si 3 N 4 matrix, with occasional localized nano-regions of a Si 2 ON 2 phase, depending on the amount of excess Si. Furthermore, it is shown that the structure of silicon nitride with high O content can be adequately described by a so-called random bonding model, according to which the material consists in bonded networks of randomly distributed tetrahedral SiO x N 4Àx (where x ¼ 0, 1, 2, 3, and 4). Photoluminescence measurements indicate that the effect of O is to introduce a gap state in the band gap of Si 3 N 4 matrix. When a large amount of O is introduced, on the other hand, the photoluminescence measurements are in agreement with a shifted conduction band minimum in the dielectric. For both cases (high and low O content), Si dangling bonds were found to give rise to the deep level in the band gap of the nitride matrix, causing the dominant emission band in the photoluminescence of the films. V C 2012 American Institute of Physics. [http://dx.

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Section: Methodsmentioning

confidence: 87%

Section: Methodsmentioning

confidence: 99%

Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

Nguyen

Kepaptsoglou

Ramasse

et al. 2012

Journal of Applied Physics

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“…The physical microscopic structure of SiO x is still a subject of discussion, and its arrangement is very important to understand the emission mechanism. A few models are commonly used to describe a SiO x network: the Mixture Model (MM) by Bell and Ley, the Random Bonding Model (RBM) by Philipp and the Intermediate Model (IM) introduced recently by Novikov and Gritsenko …”

Section: Introductionmentioning

confidence: 99%

“…For example, SiO x films obtained by magneto‐sputtering, plasma‐enhanced chemical vapor deposition, and a number of commercially available bulk silicon monoxides have been allocated to the MM whereas the structures of SiO x films obtained by radio‐frequency sputtering and physical evaporation were claimed to match to the RBM . The IM was used by Novikov and Gritsenko to describe SRO films prepared by LPCVD from a SiH 4 and N 2 O source at 750 °C. However, our group also has been modeling the SRO‐LPCVD with the RBM.…”

Section: Introductionmentioning

confidence: 99%

Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD

Aceves-Mijares

Espinosa‐Torres

Flores-Gracia

et al. 2013

Surface & Interface Analysis

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Silicon rich oxide (SRO) is a silicon compatible material that could solve the light emission limitation inherent to bulk silicon. However, not many applications are yet reported, since still much research has to be done. In this paper, SRO superficial films were obtained by low pressure chemical vapor deposition. Structural and optical characterization was done by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) corroborating that after annealing, the SiO and the Si 2 O phase clearly increases. Emission of SRO in the range between ultra violet and near-infrared is determined by photo, electro and cathode luminescence. Assuming that emission is due to agglomerates of Si-O compounds, computational simulations of cyclic chains of SiO were done to calculate the FTIR spectra, emission and HOMO-LUMO densities. It was found that emission of molecules with less than 10 silicon atoms is not likely to be present in the annealed films. However, for molecules with more than 13 silicon atoms, the emission extends to the visible and near infrared region. The calculated FTIR agrees with the experimental results.

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“…Therefore, we suppose that LRS conductivity is conditioned by the presence of the nonstoichiometric HfOx phase. The outlook on the structure of nonstoichiometric oxides and nitrides was developed in [29][30][31][32] for SiOx, SiNx and SiOxNy. In the random mixture (RM) model, SiOx consists of a mixture of two phases, Si and SiO2.…”

mentioning

confidence: 99%

The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

Islamov

Перевалов

Gritsenko

et al. 2017

Advances in Semiconductor Nanostructures

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Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Cited by 29 publications

References 19 publications

Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

Composition and emission characterization and computational simulation of silicon rich oxide films obtained by LPCVD

The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

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