Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator

Kim, Yeo-Myeong; Kim, Eom-Ji; Lee, Wonho; Oh, Jiyoung; Yoon, Sung‐Min

doi:10.1039/c6ra09503h

Cited by 13 publications

(11 citation statements)

References 16 publications

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“…The situation is similar to the memory improvement of the brain through impressions of high repetition rate with long time memorized state. The ion diffusion is quite often used to explain conductance change in memristor [40]- [42]. For our device, Ag + diffused in the AlO x N y layer with the help V − Al could explain this synaptic phenomenon.…”

Section: B I-v Measurementmentioning

confidence: 88%

“…The signal is from repeated stimulation to pre-synapse [36]- [39]. As discussed below, the resistive switching device based on oxygen-induced Ag/AlN/Al thin film shows a phenomenon similar to the STP-LTP transition in biological systems [40]. In the STP stage (the 1 st − 10 th pulses), the conductance ratio G/G 0 of the device was increased from 1 to ∼10.…”

Section: B I-v Measurementmentioning

confidence: 92%

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Synaptic Learning and Forgetting Behavior in Ag/AlN/Al Memristor With ${\text{O}_{2}}$ Annealing Effect

Zhu

2019

IEEE Access

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The learning and forgetting behavior of AlN thin film with O 2 annealing effect memristor had been investigated in this study. Such synaptic behavior could be observed after AlN thin film executed O 2 annealing process. The oxygen-induced AlN thin film exhibited memristive effect in resistance with positive and negative current-voltage (I-V) measurement loops which had never been observed in AlN thin film without annealing effect. The O 2 annealing process could decrease the number of oxygen vacancies (V + o) in interface between top electrode and active layer. A typical I-V measurement is shown in this study. If continuous positive voltage pulses applied, the device conductance would increase gradually which is called learning behavior of device. If negative voltage pulse applied, the device conductance would decrease gradually which is called forgetting behavior of device. The memristor conductance was thought to be closely associated with synaptic weights, the strength of synaptic connections. The learning and forgetting behavior of memristor is corresponding to LTP and LTD process in synaptic system. The ion diffusion played an important role in memristive properties which could form one or more local conductive filaments (CFs) in active layer. If the paths were gradually formed or broke, this would cause the memristor conductance changed gradually with measured voltage. The retention time and memristor conductance should depend on stimuli pulse shape, number and interval time. INDEX TERMS Memristor, AlN thin film, synaptic system.

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Section: B I-v Measurementmentioning

confidence: 88%

Section: B I-v Measurementmentioning

confidence: 92%

Synaptic Learning and Forgetting Behavior in Ag/AlN/Al Memristor With ${\text{O}_{2}}$ Annealing Effect

Zhu

2019

IEEE Access

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“…The ion-induced electrostatic and electrochemical modulation processes in EDL transistors share similarities with the behaviour of the synaptic cleft, making them good candidates for synapse emulations. EDLTs have been used to mimic various synaptic functions, including both short-term [161,[288][289][290][291][292][293] and long-term synaptic plasticity [294][295][296][297].…”

Section: Synaptic Devices and Neuromorphic Systemsmentioning

confidence: 99%

Present status of electric-double-layer thin-film transistors and their applications

Cai¹,

Wilson²,

Song³

2021

Flex. Print. Electron.

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As thin-film transistors (TFTs) are the workhorse of thin-film electronics, a great deal of focus has been placed upon improving their performance. One major avenue of investigation is the use of electrolyte dielectrics, which can form high capacitance electric-double layers (EDLs). The high capacitance of the EDL enables low-voltage TFT operation by inducing high carrier densities in the channel at low operating voltages. Moreover, due to the diverse range of electrolyte materials under investigation, many EDL TFTs meet the requirements for use in flexible and printable electronics. Here, the basic principles of TFTs and EDLs are introduced along with the advantages and disadvantages of different types of electrolytes. The present status of EDL TFTs is assessed with respect to different channel materials, e.g. oxide semiconductors and organic semiconductors. An overview of the potential uses of EDL is also given, including research into insulator-to-metal and insulator-to-superconductor transitions as well as incorporation into both chemical and thermal sensors. Beyond the basic EDL TFT building blocks, logic circuits for low-power electronic devices, such as memories, sensors, and neuromorphic circuits, which take advantage of the unusual properties of the EDL to mimic neural networks, are also summarized. Finally, the outlook and challenges for EDL TFTs are discussed.

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“…20. [93][94][95][96][97] A poly(4-vinylphenol)-sodium β-alumina gate insulator is used, and the electrical conductance can be modulated with various input pulse conditions owing to the movements of sodium ions within the electrolytic gate insulator, where paired-pulse facilitation, short-term memory, and long-term memory operations are well emulated, which are native functions in living brains.…”

Section: Neuromorphic Systemsmentioning

confidence: 99%

Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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Metal-oxide semiconductors are widely used for thin-film transistors for flat-panel displays, but they do not seem to be limited to the conventional applications. In this review, emerging applications using metal-oxide semiconductor thin-film devices are reviewed, which may be novel killer applications in the future. First, the essential advantages are enumerated, and, next, based on the essential advantages, several proposals of emerging applications from many organizations are introduced. First, power devices using metal-oxide semiconductor thin-film devices are proposed, because they can be tolerant against high voltage, and the carrier mobility is high. Second, sensing devices are proposed, because the electrical characteristic can be sensitive to peripheral environment, and the thin-film devices can be fabricated on large areas with low cost. Third, thermoelectric devices are proposed, because the Seebeck coefficients can be improved, and the cost performance is the most important. Fourth, computing applications, including many kinds of related applications, are proposed, where various essential advantages are available each. Finally, neuromorphic systems are proposed, where the metal-oxide semiconductor thin-film devices have the potential possibility to be key components in neuromorphic systems for artificial intelligences, which are central concepts in smart societies.

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Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator

Abstract: In this work, we proposed new type of synapse device with thin-film transistor (TFT) configuration using an In–Ga–Zn–O (IGZO) as active channel and a poly(4-vinylphenol)–sodium β-alumina (PVP–SBA) as gate insulator for emulating brain-like functions.

Cited by 13 publications

References 16 publications

Synaptic Learning and Forgetting Behavior in Ag/AlN/Al Memristor With ${\text{O}_{2}}$ Annealing Effect

Synaptic Learning and Forgetting Behavior in Ag/AlN/Al Memristor With ${\text{O}_{2}}$ Annealing Effect

Present status of electric-double-layer thin-film transistors and their applications

Emerging applications using metal-oxide semiconductor thin-film devices

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