Shrinking Circuits Area with High-Mobility Channel MOSFETs

Abstract

Impacts of high-mobility channels on footprints of a CMOS circuit were examined. Under a condition of fixed VTH variation and operation speed, it was revealed that high-mobility channels are effective to reduce channel width without increasing VTH variation. An area of a 256kbit SRAM of 65 nm technology was estimated to be reduced to 77% by replacing Si-channel n/pMOSFETs with In0.53Ga0.47As/Ge-channel MOSFETs.