“…The galvanomagnetic properties of the narrow-gap n-type diluted magnetic semiconductor (DMS) (Cd 1± ±x± ±y Zn x Mn y ) 3 As 2 , briefly CZMA, have been investigated (i) in the vicinity of the gapless state for |E g | < 0.1 eV [1] and (ii) relatively far from it, at E g % 0.27 eV [2,3], by changing the gap E g with variation of the composition. In the latter case, corresponding to x + y = 0.3, the anomalous magnetic field dependence of the electron effective mass, m(B) = m(0) + aB where m(0)/m 0 = 0.03 to 0.05 and a/m 0 = (8 to 15) Â 10 ± ±3 1/T, has been observed.…”