Shunt resistance criterion: Design and implementation for industrial silicon solar cell production

López-Escalante, M.C.; Jiménez, Francisco Martín; Pérez, Mercedes Gabás; Leinen, D.; Barrado, José

doi:10.1016/j.solener.2020.05.092

Cited by 5 publications

(3 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reverse saturation current causes leakage current in the device and generates light induced degradation in solar module during its field application. These criteria ultimately affect levelised cost of electricity in any PV systems [35][36][37].…”

Section: Resultsmentioning

confidence: 99%

A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells

Sharma¹,

Pal²,

Dhasmana³

et al. 2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

View full text Add to dashboard Cite

We investigated incorporation of a novel approach of phosphorous silicate glass layer thinning (PGT) process in the N-PERT process flow to minimise pinhole defects at the silicon nitride (Si3N4) surface. The thinning (PGT) process for optimum HF deposition time of 12 min resulted in excellent cell efficiency of ∼20.55% with pinhole free layer and high electrical yield (∼0% for I Rev > 1.5 A). After optimising technology, stability is also explored with and without PGT process line, which confirms advantages of this approach. This significant reverse failure reduction due to the proposed PGT process can eventually help in improving overall cell performance of the N-PERT devices. This process can be a part of strategy for reducing process cost of solar cell in any industrial mass production line with improved yield (reduction in reverse failure from 6.6 to 1.5% for one month of mass production). Thus, the PGT process with negligible electrical rejection and high yield increases the possibility of high throughput in mass production line.

show abstract

Section: Resultsmentioning

confidence: 99%

A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells

Sharma¹,

Pal²,

Dhasmana³

et al. 2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…The R SH of a solar cell is determined using illuminated I-V characteristics of the cell extend from the fourth to the third quadrant while I o can be evaluated by dark I-V measurement. 27 Thus, R sh and I o are crucial cell parameters to its performance during its field applications in the PV panel. The I-V equation for a solar cell under illumination in the presence of a shunt resistance is given by 28 where I L , I o , R s are light generated current, reverse saturation current and series resistance, respectively.…”

Section: Resultsmentioning

confidence: 99%

A study on passivation improvement in n-passivated emitter rear totally diffused solar cell using rapid thermal annealing

Sharma

Dhasmana

Verma

et al. 2022

Energy & Environment

View full text Add to dashboard Cite

An investigation on enhanced surface passivation in the existing industrial process line of large area n-type silicon (Si) Passivated Emitter Rear Totally diffused ( n- PERT) solar cell has been performed. The Rapid Thermal Process (RTP) optimization for 20 min is conducted in the temperature range of 500–900°C and device evaluation is carried out with respect to regularly processed n-PERT solar cell. The impact of pre-metallization annealing is studied with the support of cell parameters like shunt resistance, reverse saturation current density determined from current-voltage measurements. The enhanced surface passivation via hydrogenation from silicon nitride (SiNx) layer during annealing is established with the help of external quantum efficiency, spectral response measurements and Fourier transform infrared spectroscopy analysis. The addition of optimized annealing resulted in improvement by 550% (from 38 to 247 µs), 7.73% (from 630.7 to 678.8 mV) and 84.77% (from 223.3 to 34 cm/s) in effective minority carrier lifetime, implied open circuit voltage and surface recombination velocity respectively. Finally, RTP technique for optimized process line has been successfully incorporated in industrial high-volume batch of 140898 CZ n-type Si wafers, which predicts conceptual validation of the study in mass scale production line with an increment in average efficiency of the device by 0.35%.

show abstract

“…to −0.3 V in the bias voltage range [ 51 ], and their distributions in the respective PV cell categories were not significantly segregated, as shown in Fig 6B and Table 1 . Although these extents are widely spread in all categories, R sh−R2 was over 1 × 10 4 Ω·cm 2 even in the HC cells ( Fig 6B ), and the R sh-R2 level was considerably higher than that proposed as the industrial R sh criteria of the PV cell (0.8–2.4 × 10 3 Ω·cm 2 ) [ 30 , 52 – 54 ]. Furthermore, because it is well known that the power loss attributed to potential-induced degradation (PID) with an obvious reduction in V oc occurs when R sh in the degraded cells/modules is below a critical value (2–3 × 10 3 Ω·cm 2 ) [ 55 ], we can conclude that the R sh extents indicated in Fig 6B would not be a crucial cause of V oc reduction.…”

Section: Resultsmentioning

confidence: 99%

Solar cell cracks within a photovoltaic module: Characterization by AC impedance spectroscopy

Tanahashi

Hsu²

2022

PLoS ONE

View full text Add to dashboard Cite

Various cell crack modes (with or without electrically inactive cell areas) can be induced in crystalline silicon photovoltaic (PV) cells within a PV module through natural thermomechanical stressors such as strong winds, heavy snow, and large hailstones. Although degradation in the performance of PV modules by cell cracks has been reported occasionally, the mode-dependent evolutions in the electrical signatures of cracks have not yet been elucidated. In this study, we propose that the reduction of the time constant in the AC impedance spectra, which is caused by the elevation of minority-carrier recombination in the p–n junction of a PV cell, is a ubiquitous signature of cracked PV cells encapsulated in a commercially available PV module. Several other characteristics derived from the illuminated current-voltage (I–V) and dark I–V data significantly evolved only in PV cells with inactive cell areas. We also propose that the evaluation by carrier recombination is a crucial diagnostic technique for detecting all crack modes, including microcracks, in wafer-based PV modules.

show abstract

Shunt resistance criterion: Design and implementation for industrial silicon solar cell production

Cited by 5 publications

References 9 publications

A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells

A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells

A study on passivation improvement in n-passivated emitter rear totally diffused solar cell using rapid thermal annealing

Solar cell cracks within a photovoltaic module: Characterization by AC impedance spectroscopy

Contact Info

Product

Resources

About