Si 2<i>p</i>core-level shifts at the Si(100)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interface: An experimental study

Zhang, K. Z.; Holl, Mark M. Banaszak; Bender, J. E.; Lee, S.; McFeely, F. R.

doi:10.1103/physrevb.54.7686

Cited by 24 publications

(21 citation statements)

References 20 publications

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“…It has a dielectric constant between 15 and 20 ͑which promises better reliability and less power consumption͒, a conduction band offset of ϳ2.3 eV, a valence band offset of ϳ3.6 eV, 2 and has fair thermal stability with silicon. [5][6][7][8][9][10][11] Examination of the Si 2p core level with SXPS for ultrathin films of SiO 2 on Si reveals five states: bulk Si, three interface suboxide states, and SiO 2 . 4 This absorption can possibly be eliminated by in situ processing, capping, or postdeposition annealing.…”

Section: Introductionmentioning

confidence: 99%

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

Ulrich¹,

Rowe²,

Niu³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) Soft x-ray photoelectron spectroscopy using synchrotron radiation has been employed to study the interface between Y 2 O 3 films and Si͑100͒. Y 2 O 3 films of ϳ8, ϳ15, and 65 Å were formed by plasma assisted chemical vapor deposition on HF-last Si͑100͒. With this deposition technique, SiO 2 forms at the interface and a kinetically limited silicate layer forms between the resulting SiO 2 deposited Y 2 O 3 . For 65 Å films, the Y 3d 5/2 binding energy was between 158.8 and 159.0 eV, 2.2-2.4 eV higher than the reported value of 156.6 eV for Y 2 O 3 . For 8 and 15 Å films, the Y 3d 5/2 binding energies were 159.6 and 158.9 eV, respectively. The relatively high binding energies are attributed to hydroxide incorporation in the film. For the ultrathin films, ϳ10 Å of SiO 2 was formed at the interface during or after the deposition. For the 8 Å film, no silicate is detectable whereas for the 15 Å film, an estimated 4 Å of silicate is present between the interfacial SiO 2 and Y 2 O 3 overlayer. Because this transition layer does not form in the 8 Å film, it is concluded that the mixing is kinetically limited. For the 8 Å film, the Si 2p 3/2 ͓SiO 2 ͔ binding energy was 3.65 eV relative to the substrate peak. For the 15 Å deposition, the Si 2p 3/2 ͓SiO 2 ͔ binding energy was 3.44 eV and the Si 2p 3/2 ͓silicate͔ binding energy was 2.65 eV relative to the substrate peak.

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Section: Introductionmentioning

confidence: 99%

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

Ulrich¹,

Rowe²,

Niu³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1(c) (and taking into account final state effects), we have been able to predict both the peak positions and relative peak intensities of the resolved features in the photoemission spectrum. Using exactly analogous arguments, the photoemission features of all other related spherosiloxane clusters can be quantitatively assigned without invoking any second neighbor effects [2][3][4][5].…”

Section: Theory a Single Vertex Attachmentmentioning

confidence: 98%

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confidence: 95%

“…However, this model was challenged in 1993 by Banaszak Holl and McFeely, who claimed that second nearest neighbor oxygen atoms can cause non-negligible Si 2p core level shifts, up to 1.0 eV for a Si attached to the Si of a SiO 3 group [2]. Their claims were based upon a photoemission study involving the adsorption of cluster molecules such as spherosiloxane (formula H 8 Si 8 O 12 ) on Si(100) [2][3][4][5].Arguing that the structure of the Si͞SiO 2 interface formed by these clusters was "known" a priori, they correlated the relative peak positions and intensities in the corresponding Si 2p spectrum with the different Si species at the interface. Pasquarello et al…”

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confidence: 98%

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New Structural Model forSi/SiO2Interfaces Derived from Spherosiloxane Clusters: Implications for Si2pPhotoemission Spectroscopy

Raghavachari¹,

Eng²

2000

Phys. Rev. Lett.

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In this Letter, we investigate the Si/SiO(2) interface structure formed by the chemisorption of H8Si8O12 and other spherosiloxane clusters on Si(100). Using transition state calculations, we clearly demonstrate that the clusters do not bond to the Si(100) surface via single vertex attachment as proposed previously, but rather attach via Si-O bond cleavage. This alternative cracked cluster geometry allows us to predict the photoemission features of spherosiloxane clusters on Si(100) without invoking second nearest neighbor effects.

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“…These experiments suggested that second-neighbor effects were important for the interpretation of photoemission experiments at silicon/silicon oxide interfaces. 9 These conclusions were bolstered by subsequent studies of the related clusters H 12 12 This assertion that second-neighbor effects are spectroscopically important has not gone unchallenged. Pasquarello et al have performed theoretical calculations indicating that the effects of second-nearest neighbors on corelevel shifts are at most 0.15 eV.…”

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confidence: 94%

The role of second-neighbor effects in photoemission: Are silicon surfaces and interfaces special?

Zhang¹,

Litz²,

Holl³

et al. 1998

Applied Physics Letters

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A widely used assignment scheme for Si 2p core-level photoemission studies of silicon oxidation relies solely on the formal oxidation state of the silicon. The tacit assumption of this assignment methodology is that second-neighbor effects have no measurable effect on observed Si 2p binding energies. In this letter, new experiments are combined with literature precedents to make the case that the second-neighbor effects play an important role in determining binding energy shifts.

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Si 2pcore-level shifts at the Si(100)-SiO2interface: An experimental study

Cited by 24 publications

References 20 publications

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

New Structural Model forSi/SiO2Interfaces Derived from Spherosiloxane Clusters: Implications for Si2pPhotoemission Spectroscopy

The role of second-neighbor effects in photoemission: Are silicon surfaces and interfaces special?

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