Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation

Huang, Jin; Loeffler, Markus; Muehle, Uwe; Moeller, W.; Mulders, J.J.L.; Kwakman, L.F.Tz.; Dorp, Willem F. van; Zschech, Ehrenfried

doi:10.1016/j.ultramic.2017.10.011

Cited by 18 publications

(9 citation statements)

References 28 publications

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“…The systems used for SEM and TEM were Raith e-Line Plus and Zeiss Libra 200 TEM, respectively. TEM samples were prepared using focused ion beam (FIB) in a FEI Helios Nanolab 660 machine applying low-damage recipes to preserve the native crystal structure [55].…”

Section: Methodsmentioning

confidence: 99%

Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

et al. 2019

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We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal annealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled plasma etching. The effects of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process are studied. Scanning electron microscopy and transmission electron microscopy are performed to study Ni diffusion, silicide phases, and silicide–silicon interfaces. Control over the silicide phase is achieved together with atomically sharp silicide–silicon interfaces. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.

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Section: Methodsmentioning

confidence: 99%

Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

et al. 2019

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“…Finally, the lamella was polished using 30, 5, and 2 keV Ga + ions to reduce surface amorphization [52] and allow for a thinner lamella. For plan-view, the samples were mounted as-is and imaged at 2 keV primary electron energy.…”

Section: Methodsmentioning

confidence: 99%

“…Then, the lamella was cut free using 30 keV Ga + ions and attached to a Cu liftout grid. Finally, the lamella was polished using 30, 5, and 2 keV Ga + ions to reduce surface amorphization and allow for a thinner lamella. Afterward, the lamella was characterized in the same tool in transmission (TSEM mode) at 20 keV primary electron energy.…”

Section: Methodsmentioning

confidence: 99%

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Rocha

Haase

Zheng

et al. 2018

Adv Elect Materials

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Low‐voltage organic field‐effect transistors (OFETs) are of great interest for organic electronics applications that require low power consumption such as wearable electronics, biomedical applications, or mobile electronics. In this work, an approach leading to transistors fabricated from solution with high charge carrier mobilities operating at voltages < 1 V is presented. By blending the small‐molecule semiconductor 6,13‐bis(triisopropylsilyl‐ethynyl)pentacene (TIPS‐pentacene) with polystyrene it is possible to achieve good film coverage and uniformity as well as ultrathin semiconductor films. This reduction in thickness relative to neat films results in a high fraction of the high‐mobility polymorph of TIPS‐pentacene and excellent film morphologies with continuous highly crystalline domains. OFETs using SiO2 as the dielectric with average hole mobilities as high as 8.3 cm2 V−1 s−1 and maximum mobilities of up to 12.3 cm2 V−1 s−1 which favorably compares with the previous record for TIPS‐pentacene, especially when considering the simplicity of the approach, are demonstrated. By depositing the optimized semiconductor blends on solution‐based polymer dielectric layers of polyvinylphenol, cross‐linked with 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride, a record‐high mobility of 4.2 cm2 V−1 s−1 for solution‐processed, ultralow‐voltage OFET devices (operating at <1 V) is obtained.

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“…Amorphization of silicon during ion irradiation is a matter that has been frequently addressed in the scientific literature. [1]- [9] One of the main reasons behind the interest in this topic is that silicon, which has been the primary material used in the semiconductor industry over the past 60 years, is routinely modified via ion beam processing. [10] However, Germanium is now being considered for future use in transistor devices mainly due to its higher charge carrier mobility compared to silicon.…”

Section: Introductionmentioning

confidence: 99%

Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction

et al. 2019

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In this work, ion irradiations in-situ of a transmission electron microscope are performed on singlecrystal germanium specimens with either xenon, krypton, argon, neon or helium. Using analysis of selected area diffraction patterns and a custom implementation of the Stopping and Range of Ions in Matter (SRIM) within MATLAB (which allows both the 3D reconstruction of the collision cascades and the calculation of the density of vacancies) the mechanisms behind amorphization are revealed. An intriguing finding regarding the threshold displacements per atom (dpa) required for amorphization results from this study: even though the heavier ions generate more displacements than lighter ions, it is observed that the threshold dpa for amorphization is lower for the krypton-irradiated specimens than for the xenon-irradiated ones. The 3D reconstructions of the collision cascades show that this counter-intuitive observation is the consequence of a heterogeneous amorphization mechanism. Furthermore, it is also shown that such a heterogeneous process occurs even for helium ions, which, on average induce only three recoils per ion in the specimen. It is revealed that at relatively high dpa, the stochastic nature of the collision cascade ensures complete amorphization via the accumulation of large clusters of defects and even amorphous zones generated by single-heliumion strikes.

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Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation

Cited by 18 publications

References 28 publications

Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction

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