Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging

Xu, Geyang; Cong, Hui; Wan, Fei; Wang, Xiaoyu; Xie, Changjiang; Xu, Chi; Xue, Chunlai

doi:10.1109/lpt.2022.3168308

IEEE Photon. Technol. Lett.

2022

DOI: 10.1109/lpt.2022.3168308

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Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging

Geyang Xu¹,

Hui Cong²,

Fei Wan³

et al.

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Cited by 5 publications

References 27 publications

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Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Yao,

Ji,

et al. 2024

J. Phys. D: Appl. Phys.

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High-performance Germanium (Ge) lateral PIN photodetector (PD) arrays for short wave infrared (SWIR) imaging based on Ge-on-insulator (GOI) platform was proposed and demonstrated. The high-quality GOI platform with top-Ge layer thickness of 1.25 μm and threading dislocation density of less than 105 cm-2 was prepared by using bonding and smart-cut technology. P-type and N-type regions with centrosymmetric racetrack shapes were introduced to lower the sidewall electric field and suppress the surface leakage current of the PD. Benefiting from the high-quality of the GOI platform and the unique design of lateral active regions, a low dark current of 2 nA under -1 V with outstanding rectification ratio of 2.1×106 were obtained at room temperature. Through constructing a vertical resonant cavity by SiO2 passivation layer and the Si/SiO2 substrate, the responsivity at 1550 nm was enhanced to 0.46 A/W with a high specific detectivity of 3.09×1010 Jones under -1 V. Ultimately, SWIR imaging was demonstrated by a Ge lateral PIN PD line array with 1×8 pixels under zero bias at room temperature. The results indicate that the proposed lateral Ge PD structure holds great application potential in the field of SWIR imaging.

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Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Yao,

Ji,

et al. 2024

J. Phys. D: Appl. Phys.

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Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Ji,

Yao,

Jiao

et al. 2024

IEEE Electron Device Lett.

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Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array

Xu,

Cong,

Pan

et al. 2024

IEEE Trans. Electron Devices

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Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging

Cited by 5 publications

References 27 publications

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array

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