Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration

He, Zhengyi; Zhang, Shan; Zheng, Li; Liu, Zhiduo; Zhang, Guanglin; Wu, Huijuan; Wang, Bingkun; Liu, Zhongyu; Jin, Zhiwen; Wang, Gang

doi:10.1109/led.2022.3203474

Cited by 14 publications

(7 citation statements)

References 16 publications

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“…These two factors are mainly responsible for the high photoresponsivity. To the best of our knowledge, the responsivity of the GNR/Al 2 O 3 /Si photodetector is the highest value for the reported graphene-based heterojunction photodetectors to date. ,− As can also be seen in Figure d, the detectivity of the device is also in the leading position. In addition, the device demonstrates a fast response time, and the photocurrent also possesses high linearity with light power density, suggesting a high potential for practical applications.…”

mentioning

confidence: 67%

High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons

Wang,

Zheng,

et al. 2023

Nano Lett.

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The inherent zero-band gap nature of graphene and its fast photocarrier recombination rate result in poor optical gain and responsivity when graphene is used as the light absorption medium in photodetectors. Here, semiconducting graphene nanoribbons with a direct bandgap of 1.8 eV are synthesized and employed to construct a vertical heterojunction photodetector. At a bias voltage of −5 V, the photodetector exhibits a responsivity of 1052 A/W, outperforming previous graphene-based heterojunction photodetectors by several orders of magnitude. The achieved detectivity of 3.13 × 10 13 Jones and response time of 310 μs are also among the best values for graphene-based heterojunction photodetectors reported until date. Furthermore, even under zero bias, the photodetector demonstrates a high responsivity and detectivity of 1.04 A/W and 2.45 × 10 12 Jones, respectively. The work shows a great potential of graphene nanoribbon-based photodetection technology.

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confidence: 67%

High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons

Wang,

Zheng,

et al. 2023

Nano Lett.

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“…This is due to the linear dispersion of the electron, which causes it to behave like a massless material, which is amazing for a monolayer material [ [115] , [116] , [117] ]. However, this is rather poor for applications in photodetection [ 118 , 119 ]. Hence, the absorbed white light is determined by the atomic structure and not the properties of the material [ 120 ].…”

Section: Overview Of the Heritage Of Graphene And Selected Propertiesmentioning

confidence: 99%

Recent advances in density functional theory approach for optoelectronics properties of graphene

Olatomiwa¹,

Adam²,

Edet³

et al. 2023

Heliyon

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“…VACNTs, a special kind of CNT, consist of individual CNTs aligned perpendicular to the substrate [ 8 , 9 , 10 ]. Although they share similar alignment with the three-dimensional (3D) vertically aligned graphene nanosheets (VAGNAs) comprising interconnected graphene sheets arranged vertically relative to the substrate and forming a porous, 3D network [ 11 , 12 , 13 ], both materials have marked differences. For instance, the individual CNTs forming the VACNTs possess hollow cylindrical (tube-like) structures characterized by a high aspect ratio, whereas the VAGNAs retain the planar shape (sheet-like) structure of the component graphene sheets while providing a large surface area.…”

Section: Introductionmentioning

confidence: 99%

Field Emission Properties of Cu-Filled Vertically Aligned Carbon Nanotubes Grown Directly on Thin Cu Foils

Nwanno,

Thapa,

Watt

et al. 2024

Nanomaterials

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Copper-filled vertically aligned carbon nanotubes (Cu@VACNTs) were grown directly on Cu foil substrates of 0.1 mm thicknesses at different temperatures via plasma-enhanced chemical vapor deposition (PECVD). By circumventing the need for additional catalyst layers or intensive substrate treatments, our in-situ technique offers a simplified and potentially scalable route for fabricating Cu@VACNTs with enhanced electrical and thermal properties on thin Cu foils. Comprehensive analysis using field emission scanning microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) mappings, and X-ray diffraction (XRD) revealed uniform Cu filling within the VACNTs across a range of synthesis temperatures (650 °C, 700 °C, and 760 °C). Field emission (FE) measurements of the sample synthesized at 700 °C (S700) showed low turn-on and threshold fields of 2.33 V/μm and 3.29 V/μm, respectively. The findings demonstrate the viability of thin Cu substrates in creating dense and highly conductive Cu-filled VACNT arrays for advanced electronic and nanoelectronics applications.

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Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration

Cited by 14 publications

References 16 publications

High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons

High-Performance Photodetectors Based on Semiconducting Graphene Nanoribbons

Recent advances in density functional theory approach for optoelectronics properties of graphene

Field Emission Properties of Cu-Filled Vertically Aligned Carbon Nanotubes Grown Directly on Thin Cu Foils

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