Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy

Kugimiya, K.; Hirofuji, Yuichi; Matsuo, Naoto

doi:10.1143/jjap.24.564

Cited by 52 publications

(8 citation statements)

References 5 publications

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“…23) The approach adopted to eliminate parallel conduction at the growth interface was inspired by previous experimental findings that silicon monoxide (SiO) is relatively volatile and can be thermally desorbed at 800 °C in vacuum. 28,29) As this suboxide could form on the Si-contaminated Ga 2 O 3 surface during pre-growth substrate exposure to ozone=oxygen, the effect of T g on buffer leakage reduction in the Ga 2 O 3 MOSFETs was investigated as shown in Fig. 6.…”

Section: Resistive Ga 2 O 3 Buffermentioning

confidence: 99%

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Wong

Sasaki

Kuramata³

et al. 2016

Jpn. J. Appl. Phys.

108

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The electron mobility in depletion-mode lateral β-Ga2O3(010) metal–oxide–semiconductor field-effect transistors (MOSFETs) with an n-channel formed by Si-ion (Si+) implantation doping was extracted using low-field electrical measurements on FET structures. An undoped Ga2O3 buffer layer protected the channel against charge compensation by suppressing outdiffusion of deep Fe acceptors from the semi-insulating substrate. The molecular beam epitaxy growth temperature was identified as a key process parameter for eliminating parasitic conduction at the buffer/substrate growth interface. Devices with a resistive buffer showed room temperature channel mobilities of 90–100 cm2 V−1 s−1 at carrier concentrations of low- to mid-1017 cm−3, with small in-plane mobility anisotropy of 10–15% ascribable to anisotropic carrier scattering.

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Section: Resistive Ga 2 O 3 Buffermentioning

confidence: 99%

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Wong

Sasaki

Kuramata³

et al. 2016

Jpn. J. Appl. Phys.

108

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“…In addition, it is noted that an emitted Si atom can react with oxides, making it possible to nucleate voids within the oxides effectively as in oxide cleaning with Si beam irradiation. [41][42][43] It is also assumed, as schematically illustrated in Fig. 12, that point defect generation can occur in vacuum as well as under an O 2 gas atmosphere for the strain at the SiO 2 /Si interface with a sufficiently large magnitude.…”

Section: Nucleation and Lateral Growth Kinetics Of Voids During Decommentioning

confidence: 99%

“…2SiO, as in the oxide decomposition enhanced by Si beam irradiation. [41][42][43] If the point defect generation kinetics is related to both the rate-limiting reaction of oxide growth and that of oxide decomposition, the reaction rates of oxide growth and decomposition could show a good correlation.…”

Section: Introductionmentioning

confidence: 99%

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Ogawa

Takakuwa

2006

jjap

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The growth and decomposition kinetics of very thin oxides on Si(001) surfaces were investigated by reflection high-energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) to monitor the reaction rates of oxide growth and decomposition in real time, and changes in surface structure and interface morphology simultaneously. The oxides prepared by stopping the second oxide layer growth at various coverages following the first oxide layer growth by Langmuirtype adsorption at 500 C under an O 2 pressure of 2:6 Â 10 À4 Pa were isothermally annealed by increasing temperature from 500 to 666 C at the same time that O 2 gas was quickly evacuated. It was observed that (1) oxide thickness continued to decrease significantly as measured on the basis of changes in O KLL Auger electron intensity ÁI O-KLL before voids appeared at a nucleation time t N as recognized by the appearance of half-order spots in RHEED patterns, (2) the SiO 2 /Si interface morphology was considerably roughened corresponding to ÁI O-KLL during void nucleation as observed by the evolution of the RHEED intensity of bulk diffraction spots ÁI bulk , (3) the ratio of ÁI bulk to ÁI O-KLL was almost constant, and (4) oxide decomposition rate during void nucleation, which was approximately given by ÁI O-KLL =t N , showed a good linear correlation with the second oxide layer growth rate immediately before starting the decomposition reaction. The good correlation between ÁI O-KLL =t N and clearly indicates that the rate-limiting reaction of the second oxide layer growth is closely related to that of the oxide decomposition during void nucleation. All the above-mentioned observations can be comprehensively interpreted using a reaction model proposed for the rate-limiting reactions of oxide growth and decomposition, in which the point defect generation (emitted Si atoms + vacancies) caused by the strain due to the volume expansion of oxidation plays a crucial role because of the high reactivity of the emitted Si atoms and vacancies with dangling bonds. Under an O 2 atmosphere, both emitted Si atoms and vacancies are the preferential adsorption sites of O 2 molecules in the oxide and at the SiO 2 /Si interface, respectively. The oxide can be decomposed by the emitted Si atoms to produce SiO molecules, which desorb from the surface, leading to oxide removal in vacuum with SiO 2 /Si interface morphology roughening, but may be oxidized within the oxide under an O 2 atmosphere.

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“…The substrate surface preparation was concluded with a "silicon beam clean," during which any remaining Si0 2 was etched by a low level silicon flux. 10 Our silicon beam clean consisted of an exposure of the surface to a silicon flux corresponding to a deposition rate of0.2 A;s for 250 sat 700 °C. This exposure of the wafer surface to the low level silicon flux results in an even sharper and brighter RHEED pattern than that obtained by heating alone.…”

Section: Sample Preparation and Verification Of The Matching Facementioning

confidence: 99%

Reflection high-energy electron diffraction patterns of CrSi2 films on (111) silicon

Mahan¹

1991

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Highly oriented films of the semiconducting transition metal silicide, CrSi 2 , were grown on ( 111) silicon substrates, with the matching crystallographic faces being CrSi 2 ( 001) /Si ( 111). Reflection high-energy electron diffraction (RHEED) yielded symmetric patterns of sharp streaks. The expected streak spacings for different incident RHEED beam directions were calculated from the reciprocal net of the CrSi 2 (001) face and shown to match the observed spacings. The predominant azimuthal orientation of the films was thus determined to be CrSi 2 (2l0>/1Si( 110). This highly desirable heteroepitaxial relationship may be described with a common unit mesh of 51 A 2 and a mismatch of -0.3%. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi 2 ( 110) I lSi ( 110). A new common unit mesh for this competing orientation is suggested; it possesses an area of 612 A 2 and a mismatch of -1.2%.

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Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy

Cited by 52 publications

References 5 publications

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Reflection high-energy electron diffraction patterns of CrSi2 films on (111) silicon

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Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy

Cited by 52 publications

References 5 publications

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Reflection high-energy electron diffraction patterns of CrSi2 films on (111) silicon

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Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer

Electron channel mobility in silicon-doped Ga₂O₃ MOSFETs with a resistive buffer layer