Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure

Gao, Xingyu; Chen, Shi; Liu, Tao; Chen, Wei; Wee, Andrew Thye Shen; Nomoto, T.; Yagi, Shunsuke; Soda, Kazuo; Yuhara, J.

doi:10.1063/1.3242005

Cited by 7 publications

(4 citation statements)

References 35 publications

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“…The PEY method provides us with high-quality spectra and is used in many SX-XAS studies, especially in the lower-energy soft X-ray (LE-SX) region (hn = 50-1000 eV). [6] The Auger EY mode, a kind of the PEY method, is more surface sensitive by collecting only Auger electrons, using an electron energy analyzer, [7] but it often suffers from low signal-to-noise ratio and is not used so much in practical XAS measurements.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the detection system in the soft X‐ray absorption spectroscopy

Nakanishi

Ohta

2011

Surface & Interface Analysis

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A unique soft X-ray absorption spectroscopy detection system has been developed for depth profiling analysis of a sample with combined different detection methods: total electron yield, partial electron yield (PEY), and partial fluorescent X-ray yield. We found that a PEY spectrum measured with a conventional microchannel plate detector is sometimes deformed by inclusion of unexpected fluorescent X-rays. In this system, a new PEY detector has been designed and constructed to overcome the aforementioned problem. In addition, the developed PEY detector successfully works with higher surface sensitivity and higher signal-to-background ratio than the total electron yield method recorded by a sample drain current. Combining this PEY detector with a sample drain current recorder and a silicon drift detector, we have established a useful soft X-ray absorption spectroscopy detection system to probe surface, interface, and bulk of a sample simultaneously.

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Section: Introductionmentioning

confidence: 99%

Improvement of the detection system in the soft X‐ray absorption spectroscopy

Nakanishi

Ohta

2011

Surface & Interface Analysis

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“…Upon high temperature annealing of SiC in vacuum, Si nanoclusters (Si n ) from the near surface region of SiC crystals keep on diffusing outwards to the surfaces [31], where dissociation of oxygen-containing molecules into oxygen-containing species also takes place. According to the phase diagrams of oxidized Si and SiC surfaces, active oxidation producing partially oxidized silicon, e.g., SiO, occurs at high temperature and low oxygen pressures [32,33].…”

Section: Resultsmentioning

confidence: 99%

Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces

Wang

et al. 2011

Chemical Physics Letters

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“…1). We show that the transition from monolayer EG to trilayer EG adopts a bottom-up growth mechanism [4], and x-ray absorption fine structure studies indicate an increase in disorder of Si atoms in the SiC substrate beneath the surface and the formation of Si clusters [5,6].…”

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confidence: 88%