Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

Daoudi, M.; Dhifallah, I.; Ouerghi, Abdelkarim; Chtourou, R.

doi:10.1016/j.spmi.2012.01.013

Cited by 29 publications

(9 citation statements)

References 23 publications

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“…Simplified band diagrams modelling by two back-to-back capacitors. Unlike homogeneous bulkdoped materials, where the electrons and ionized donors appear in the same spatial location, for Si-δ-doped heterojunction QW the electrons are transferred to the QW region while the ionized donors remain in the δ-doped layers [11][12][13][14][15][16][17][18][19] . Because of the separation of charges, a model consisted of two back-to-back capacitors was chosen to calculate the internal transverse electric field (F) and electric potential difference ΔV across the space layer.…”

Section: Resultsmentioning

confidence: 99%

“…In contrast to the homogeneous bulk-doped structure [7][8][9] , the uniform modulation doping in barrier layers of III-V QW structure can supply charge carriers in the undoped active channel with high mobility due to less scattering from ionized dopants 10 . Furthermore, the single Si-δ-doping (modulation doping with single Si-doping plane) [11][12][13][14][15][16] in the barrier layer with appropriate space layer thickness (t S ) can offer effectively more 2DEG than the uniform modulation doping. As compared to the single Si-δ-doping, the dual and symmetric Si-δ-doping (modulation doping with two planes of Si evenly separating into two sides of the active channel with appropriate t S , see Fig.…”

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confidence: 99%

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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/ InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (t S = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n 2D (T)] was observed for t S = 10 and 15 nm but not for t S = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough t S (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of "modulation doping" and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n 2D , and hence no hysteresis curve was observed. Finally, effects from t S on the T-dependence of electron mobility in active QW channel are also discussed.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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“…The major important layer in this architecture is the silicon δ‐doping layer. This layer has the doping concentration of about 2 × 1017 cm −3 ; it donates sufficient electrons to improve the conduction and the electrical properties of the device …”

Section: Device Architecturementioning

confidence: 99%

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

Poornachandran¹,

Mohankumar²,

Kumar

et al. 2019

Int J Numerical Modelling

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This paper gives a comprehensive detail about an emerging InAs high electron mobility transistor (HEMT) technology with proper material combination making it suitable for low-power and high-frequency applications. Over the decade, various material combinations were adopted to improve the sheetcarrier density and frequency performances. In this work, we report the performance and optimization of 30-nm gate length InAs-based dual channel double gate (DCDG) HEMT for terahertz application. The dual channel is formed in the device due to the combination of five layers (In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/ InAs/In 0.7 Ga 0.3 As) and thus provides a significant improvement in drain current and transconductance. Moreover, the gate scaling with optimized gate to drainside recess length of gate (L rd ) leads to reduced parasitic (C gg ) and tremendously increases the RF performance metrics f max and f T . For this device, high drain current of 2.203 mA/μm with peak transconductance of 4.77 mS/μm is observed. Further optimization of L rd results in peak f T of 810 GHz and f max of 900 GHz at a drain source voltage V ds = 0.5 V. These parameters empower a feasibility of the device for submillimeter as well as terahertz applications.

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“…By changing the gate length, the oscillation response of the device can be adjusted. [16,17] But for the device structure shown in Fig. 5, the gate length is fixed, and the response rates of different gate lengths to the terahertz wave cycle are longer and the cost is higher in an experiment.…”

Section: Effect Of Gate Length On Terahertz Response Ratementioning

confidence: 99%

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

Cui

et al. 2018

Chinese Phys. B

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The samples of In x Ga 1−x As/In 0.52 Al 0.48 As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the In content and spacer layer thickness are changed and two kinds of methods, i.e., contrast body doping and δ -doping are used. The samples are analyzed by the Hall measurements at 300 K and 77 K. The In x Ga 1−x As/In 0.52 Al 0.48 As 2DEG channel structures with mobilities as high as 10289 cm 2 /V•s (300 K) and 42040 cm 2 /V•s (77 K) are obtained, and the values of carrier concentration (N c ) are 3.465×10 12 /cm 2 and 2.502×10 12 /cm 2 , respectively. The THz response rates of InP-based high electron mobility transistor (HEMT) structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory. The results provide a reference for the research and preparation of InP-based HEMT THz detectors.

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Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

Cited by 29 publications

References 23 publications

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

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Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

Cited by 29 publications

References 23 publications

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Sheet‐carrier density and I‐V analysis of In0.7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

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Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications