Si-Disordering in MgAl<sub>2</sub>O<sub>4</sub>-Spinel at High <em>P</em>-<em>T</em> Conditions, with Implication to Si-Mg Disorder in Mg<sub>2</sub>SiO<sub>4</sub>-Ringwoodite
Abstract:A series of Si-bearing MgAl2O4-spinels were synthesized at 1500-1650 °C and 3–6 GPa. These spinels had SiO2 contents up to ~1.03 wt%, and showed a substitution mechanism of Si4+ + Mg2+ = 2Al3+. Unpolarized Raman spectra were collected from polished single grains, and displayed a set of well-defined Raman peaks at ~610, 823, 856 and 968 cm-1 which had not been observed before. Aided with the Raman features of natural Si-free MgAl2O4-spinel, synthetic Si-free MgAl2O4-spinel, natural low quartz,… Show more
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