Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Fong, W.K.; Leung, Kam Lun; Surya, C.

doi:10.1016/j.jcrysgro.2006.10.024

Cited by 9 publications

(8 citation statements)

References 9 publications

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“…[8] for the MOVPE of GaAs layers doped with pure DTBSi. Such a trend has also been observed in the case of GaN layers doped with DTBSi in MOVPE and CVD [24,25].…”

Section: Gaas Doping Using H 2 -Diluted Dtbsisupporting

confidence: 65%

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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A wide range of n-and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H 2 -diluted DTBSi and CBr 4 as gas precursors for Si and C. We show that the doping level can be varied by modifying either the concentration or the flux of the diluted precursor. Specifically, we demonstrate carrier concentrations of 6 × 10 17 -1.2 × 10 19 cm −3 for Si, and 9 × 10 16 -3.7 × 10 20 cm −3 for C, as determined by Hall effect measurements. The incorporation of Si and C as a function of the flux of the corresponding diluted precursor is found to follow, respectively, a first and a fourth order power law. The dependence of the electron and hole mobility values on the carrier concentration as well as the analysis of the layers by low-temperature (12 K) photoluminescence spectroscopy indicate that the use of H 2 for diluting DTBSi or CBr 4 has no effect on the electrical and optical properties of GaAs.

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“…[8] for the MOVPE of GaAs layers doped with pure DTBSi. Such a trend has also been observed in the case of GaN layers doped with DTBSi in MOVPE and CVD [24,25].…”

Section: Gaas Doping Using H 2 -Diluted Dtbsisupporting

confidence: 65%

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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“…For type B samples, a 5 nm thick Ni texture promoter was deposited by e-beam technique prior to the deposition of the WO 3 layer which is followed by the growth of the WS 2 layer inside the quartz tube. For type C samples, we first deposited n-type GaN thin films on (0001) sapphire substrates by metalorganic chemical vapor deposition technique39 followed by the e-beam evaporation of 5 nm thick Ni layer and the WO 3 layer. The thickness of the WO 3 precursor layer was 400 nm and was monitored by an INFICON in-situ quartz crystal thickness monitor.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Fong

Wang

et al. 2016

Sci Rep

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High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at −1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions.

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“…This was followed by a 2 m thick undoped GaN epilayer deposited at 1035°C and a pressure of 200 Torr. Ditertiarybutyl silane was used as a dopant source for the growth of n-doped GaN [18][19][20] and the carrier concentration of the n-layer is 3 ϫ 10 18 cm −3 . The active region consists of a five-period GaN/InGaN MQW, where the InGaN QWs were grown at 700°C and the GaN barriers at 850°C.…”

Section: Methodsmentioning

confidence: 99%

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Leung

Fong

Chan

et al. 2010

Journal of Applied Physics

Self Cite

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We report investigations on the degradation of GaN-based light-emitting diodes due to high dc current stress by examining two types of devices with the same fabrication procedures except for the growth conditions for the InGaN quantum wells ͑QWs͒. Higher trimethylindium and triethylgallium fluxes are used for type A devices resulting in a threefold increase in the InGaN QWs growth rate compared to type B devices. Detailed structural and optoelectronic properties of the devices are investigated by transmission electron microscopy, atomic force microscopy, thermal imaging, I-V measurements, and the low-frequency noise properties of the devices as a function of the stress time, t S . The experimental data show that the QWs in type B devices are dominated by spiral growth and they have substantially higher strain nonuniformity than type A devices. The highly strained GaN/ InGaN interfaces in device B are also responsible for the faster increase in the defect density due to hot-electron injection. The defects enhance the trap-assisted tunneling in the multiple quantum wells ͑MQWs͒ resulting in the development of hot spots among type B devices after high current stressing of the MQWs. This in turn leads to an increase in the defect generation rate resulting in a thermal run-away condition that ultimately resulted in the failure of the device. The data show that an increase in the growth rate in the InGaN layer led to the domination by the step flow growth mode over the spiral growth mode in the MQWs. This is the main reason for the reduction in the dislocation density in type A devices and hence their increase in device reliability.

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Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Cited by 9 publications

References 9 publications

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

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