Si growth at graphene surfaces on 6H-SiC(0001) substrates

Sone, Junki; Yamagami, Tsuyoshi; Nakatsuji, Kan; Hirayama, Hiroyuki

doi:10.7567/jjap.55.035502

Cited by 13 publications

(5 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This accounts well for the theoretical model of silicene in the low buckling configuration (as discussed below) and reported in literature for the free-standing silicene and for silicene on graphene . Besides the well-known growth of Si clusters on HOPG and on epitaxial graphene on 6H-SiC(0001), an observation of genuine silicene regions has been reported in the present study. The most striking difference with the existing literature on silicene growth on metallic substrates is the absence of any atomic surface reconstruction and/or superstructure. , …”

Section: Resultssupporting

confidence: 92%

Formation of Silicene Nanosheets on Graphite

et al. 2016

View full text Add to dashboard Cite

The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate-silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six second nearest neighbors, thus demonstrating its dominant sp configuration. Our scanning tunneling spectroscopy investigations confirm the metallic character of the deposited silicene, in excellent agreement with our band structure calculations that also exhibit the presence of a Dirac cone.

show abstract

Section: Resultssupporting

confidence: 92%

Formation of Silicene Nanosheets on Graphite

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Sone et al studied the growth of Si on EG/6H-SiC(0001) [50]. Unfortunately, 2D silicene has not been observed on graphene surface.…”

Section: Silicenementioning

confidence: 99%

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Lü¹,

Liu²,

Wang³

et al. 2023

Nanotechnology

View full text Add to dashboard Cite

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced

show abstract

“…Hence, strong film–substrate interactions appear necessary to obtain the hb structure in group IV elements . When weakly interacting vdW substrates are used, the formation of bulk-like silicon or germanium clusters has been reported. ,, While metal substrates can provide the strength of interaction necessary for stabilization, they strongly disturb the Dirac states and other intrinsic properties. Indeed, many reports suggest that the Dirac-like cones for silicene are destroyed on Ag(111) substrates by Si–Ag hybridization, ,,,, although the topic is still debated .…”

Section: Elemental 2d Materialsmentioning

confidence: 99%

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

2021

View full text Add to dashboard Cite

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

show abstract

Si growth at graphene surfaces on 6H-SiC(0001) substrates

Cited by 13 publications

References 23 publications

Formation of Silicene Nanosheets on Graphite

Formation of Silicene Nanosheets on Graphite

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Contact Info

Product

Resources

About