Si(Li) Coaxial Detectors

Kraner, H.W.; Boulin, C. A.; Wagner, S.

doi:10.1109/tns.1970.4325693

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…For sample D, in contrast, C p continues to grow (and G p for |V | around the G p minimum, to decrease) even down to f = 10 3 Hz. Following previous studies of the frequency dispersion of p-n junction response [17], we interpret these frequency dependences as evidence for carrier trapping at and release from deep bandgap levels. It is well known that due to the large surface area to bulk volume ratio in NWs, surface states have an important role in the electronic transport and recombination properties of NW-based devices [18].…”

Section: Discussionsupporting

confidence: 66%

Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

Caram¹,

Sandoval²,

Tirado³

et al. 2010

Nanotechnology

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GaAs nanowire (NW)-based p-n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 10(3)-10(7) Hz frequency range and the - 1.5-1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p-n junction properties (DC rectification and p-n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.

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Section: Discussionsupporting

confidence: 66%

Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

Caram¹,

Sandoval²,

Tirado³

et al. 2010

Nanotechnology

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show abstract

“…During CVmeasurements under the applied ac electric field it also leads to variation of measured concentration with the test signal frequency. This frequency dependence of carrier concentration (N), originated from the deep levels, can be written accordingly to [15]:…”

Section: Samples and Experimentationmentioning

confidence: 99%

Frequency dispersion of capacitance–voltage characteristics in wide bandgap semiconductor-electrolyte junctions

Frolov

Зубков

2016

Semicond. Sci. Technol.

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The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

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Si(Li) Coaxial Detectors

Cited by 2 publications

References 7 publications

Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

Frequency dispersion of capacitance–voltage characteristics in wide bandgap semiconductor-electrolyte junctions

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