2021
DOI: 10.1364/oe.424963
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Si microring resonator optical switch based on optical phase shifter with ultrathin-InP/Si hybrid metal-oxide-semiconductor capacitor

Abstract: We propose a microring resonator (MRR) optical switch based on III-V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifter with an ultrathin InP membrane. By reducing the thickness of the InP membrane, we can reduce the insertion loss of the phase shifter, resulting in a high-quality-factor (Q-factor) MRR switch. By optimizing the device structure using numerical analysis, we successfully demonstrated a proof-of-concept MRR optical switch. The optical switch exhibits 0.3 pW power consumption for swit… Show more

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Cited by 12 publications
(6 citation statements)
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“…Supposing that the PIC is controlled with conventional electrical hardware, the clock frequency for MVM was assumed to be 3 GHz. At this clock frequency, high-speed III–V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifters can be used to replace the slow TO phase shifters used in this proof-of-concept demonstration. Hybrid MOS phase shifters also eliminate the thermal crosstalk of TO phase shifters, thereby significantly simplifying the control of the MRRs. Previously, we have fabricated MRR switches based on the III–V/Si hybrid MOS phase shifter using a 30 nm thick III–V membrane .…”
Section: Resultsmentioning
confidence: 99%
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“…Supposing that the PIC is controlled with conventional electrical hardware, the clock frequency for MVM was assumed to be 3 GHz. At this clock frequency, high-speed III–V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifters can be used to replace the slow TO phase shifters used in this proof-of-concept demonstration. Hybrid MOS phase shifters also eliminate the thermal crosstalk of TO phase shifters, thereby significantly simplifying the control of the MRRs. Previously, we have fabricated MRR switches based on the III–V/Si hybrid MOS phase shifter using a 30 nm thick III–V membrane .…”
Section: Resultsmentioning
confidence: 99%
“…Previously, we have fabricated MRR switches based on the III−V/Si hybrid MOS phase shifter using a 30 nm thick III−V membrane. 54 For a 100 × 100 MRR crossbar array, the computation speed is expected to be approximately 60 TOPS. We further evaluate the power consumption for static inference tasks, where the weights can be considered constant.…”
Section: ■ Resultsmentioning
confidence: 99%
“…In the opposite case, no voltage is applied to the MRR so the optical signal is coupled and routed through the bypass waveguide with no phase shifter (see Fig. MRR switches can be reprogrammed at tens of Gb/s with a much smaller optical loss compared to high-bandwidth phase shifters for single-bit operation [34]. This enables us to use low-bandwidth low-loss phase shifters [3] and leverage data reuse while achieving high speed.…”
Section: B Photonic Modular Arithmetic Unitsmentioning
confidence: 99%
“…Once the values in the phase shifters are settled, one RNS-MMVM operation is completed every 0.1 ns (10 Giga MVMs per second). This operation rate is based on the modulation bandwidth of the MRRs [34]. ADCs [56] achieve ≥10 GS/s sampling rate so they do not cause a latency overhead when the operations are pipelined.…”
Section: A Accuracymentioning
confidence: 99%
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