Si–MoS₂ Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

Abstract

In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS 2 . Mechanically exfoliated MoS 2 flakes are transferred onto a Si layer; the resulting Si−MoS 2 p−n photodiode shows excellent performance with a responsivity (R) and detectivity (D*) of 76.1 A/ W and 10 12 Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si−MoS 2 heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS 2 thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82 × 10 −15 W Hz −1/2 . Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection.

Thickness-dependent photoelectric properties of MoS2/Si heterostructure solar cells

“…Shin et al . 62 optimized the photo response of MoS 2 /Si photodiode device by varying the MoS 2 thickness, and found the excellent performance with a responsivity and detectivity of 76.1 A/W and 1012 Jones, respectively. Strikingly, mixed-dimensional vdW heterostructure suggests a considerable candidate in realistic fabrication and practice applications.…”

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…The highest values of photoresponsivity and detectivity reached 1 Â 10 4 A W À1 and 8 Â 10 12 Jones for monolayer-bilayer (1L-2L) heterojunctions and 4 Â 10 3 A W À1 and 6 Â 10 12 Jones for monolayer-8-layer (1L-8L) MoS 2 heterojunctions at 660 nm. In another study, Shin et al 175 deposited mechanically exfoliated multilayer MoS 2 akes onto a Si layer to develop MoS 2 /Si p-n heterojunction photodiodes; the optoelectronic properties were improved and optimized by controlling the number of layers of MoS 2 akes. The photoresponse of the MoS 2 /Si photodetector was measured at 405, 520, and 660 nm wavelengths under different incident power intensities and for various thicknesses of multilayer MoS 2 akes.…”

“…Table 1 summarizes the research data collected on the gure-of-merit of a wide variety of MoS 2 based photodetectors in terms of their key parameters such as photoresponsivity, detectivity and response/recovery time (s rise /s decay ) of photodetectors and their performance measured at various laser wavelengths under different incident laser powers/intensities. 138,171,175,179,[190][191][192][193][194][195][196][197][198][199]217,226, The MoS 2 based photodetectors have been analyzed taking into account the factors affecting their performance. MoS 2 based photodetectors have also been discussed and categorized as (i) pristine MoS 2 based photodetectors, (ii) exible MoS 2 photodetectors, (iii) MoS 2 /2D van der Waals heterostructure-based photodetectors, (iv) MoS 2 /perovskite heterostructure-based photodetectors, (v) MoS 2 /inorganic semiconductor heterostructure-based photodetectors, (vi) chemically doped MoS 2 photodetectors, and (vii) self-powered MoS 2 photodetectors.…”

Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light

“…Since we carried out a native oxide removal process based on HCl: deionized water (DI) solutions right before the MoS 2 transfer process, a well‐controlled surface/interface with very thin interfacial oxide was obtained compared with other reports of MoS 2 /Si heterostructure. [ 26,27 ] Figure 1f depicts the measured EDX line profile from A to A', which definitely shows boundaries of the Al 2 O 3 passivation layer, MoS 2 , and In 0.53 Ga 0.47 As without inter‐diffusion of atoms. From these results, we have successfully confirmed the vertical MoS 2 /In 0.53 Ga 0.47 As heterostructure with good uniformity.…”