“…In more detail, the trap recharging in the multibarrier system is considered in ref. 45. So, a decrease in the measurement frequency leads to a recharging of a higher number of traps and, thus, the magnitude of the peaks at the C-V characteristics is increased.…”
Section: Electric Properties Of the Grown V 2 O 5 Layersmentioning
V2O5/Si structures with an average V2O5 thickness of 1.0–3.6 nm and orthorhombic phase demonstrate stable memristive switching with an ON/OFF ratio ∼1–4 orders of magnitude.
“…In more detail, the trap recharging in the multibarrier system is considered in ref. 45. So, a decrease in the measurement frequency leads to a recharging of a higher number of traps and, thus, the magnitude of the peaks at the C-V characteristics is increased.…”
Section: Electric Properties Of the Grown V 2 O 5 Layersmentioning
V2O5/Si structures with an average V2O5 thickness of 1.0–3.6 nm and orthorhombic phase demonstrate stable memristive switching with an ON/OFF ratio ∼1–4 orders of magnitude.
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