Si nanocrystals in SiO2 films analyzed by small angle X-ray scattering

Alkyl Passivation and Amphiphilic Polymer Coating of Silicon Nanocrystals for Diagnostic Imaging

“…Not only is it difficult to resolve the nanocrystals themselves, it is even more difficult to determine an accurate diameter from the edge of the nanocrystal, which is needed to obtain a statistically meaningful measure of the nanocrystal size distribution in the sample. Grazing incidence small‐angle X‐ray scattering (GISAXS) and transmission SAXS have been used to determine the size distribution of Si nanocrystals embedded in porous Si,37 SiO 2 ,38 and amorphous silicon matrices,39 however, SAXS has not been used before to determine the size distribution of sterically stabilized silicon nanocrystals in a solvent dispersion.…”

Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering

“…The same group also investigated by GISAXS amorphous SiO/SiO 2 superlattices [365][366][367], which were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO 2 (10 layers each) on Si (100) substrate. Rotation of the Si substrate during evaporation ensured homogeneity of the films over the whole substrate.…”

Study of the Interface Layers Between Si Nanoparticles and SiO2 Matrix Deposited by e‐Gun Evaporation

“…However, to reach a deeper insight into the shape and size of objects embedded within a matrix of any kind we applied SAXS, i.e., its modification GISAXS, because the studied multilayers were deposited on thick Si substrates which are opaque for the applied X‐rays energy. The penetration depth of the X‐rays was estimated to be about 350 nm and therefore the whole multilayered structure contributed to the scattering signal.…”