Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

Zerga, A.; Carrada, Marzia; Amann, M.; Slaoui, A.

doi:10.1016/j.physe.2006.12.029

Cited by 22 publications

(11 citation statements)

References 21 publications

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“…The PL peaks at 600 and 622 nm are attributed to the nonbridging oxygen hole center (NBOHC) and the silicon defect states ð Si 0 Þ [34], [37]. In addition, the nitrogen defect state ðN 0 2 Þ in the SiN x layer generates the PL with peak wavelength at 680 nm [38]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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Yellow electroluminescence (EL) of a 20-pair Si-rich SiN x /SiO x superlattice is demonstrated by plasma-enhanced chemical vapor deposition (PECVD) and annealing process. After annealing at 900 C for 30 min, two photoluminescence (PL) peaks at 480 and 570 nm are observed to blue-shift the PL wavelength, and the corresponding peak intensity is enhanced due to the self-aggregation of Si quantum dots (QDs). When increasing the annealing temperature to 1050 C, the PL peaks caused by the aggregated Si-QDs in SiN x and SiO x layers red-shift to 500 and 600 nm, thereby shifting the PL peak wavelength to 520 nm. Such a wavelength red-shifting phenomenon is mainly attributed to the formation of large Si-QDs due to the Ostwald ripening effect. The turn-on voltage and the V -I slope of the ITO/SiN x /SiO x /p-Si/Al LED device are 200 V and 15.5 kV/mA with FowlerNordheim (FN) tunneling assistant carrier transport under an effective barrier height of 1.3 eV. Maximum output-power-current slope of 0.2 W/A at power conversion efficiency of 10 À6 is detected.

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Section: Resultsmentioning

confidence: 99%

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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“…Calculation of the migration rate necessitates selection of the parameters υ 0 and E 0 in eqn. (2). In this work, υ 0 and E 0 take the following values 10 13 s -1 and 0.6 eV, respectively [12] .…”

Section: Description and Modellingmentioning

confidence: 99%

“…Recently, considerable attention has been devoted to silicon nanocrystals (Si-nc) from both the experimental and the theoretical perspectives [1][2][3][4] , due to its potential nanoelectronic and optoelectronic device applications as well as their interesting physical properties. Many researchers have investigated the production of the light emission from Si-nc embedded in silicon (Si) oxide films [5,6] .…”

Section: Introductionmentioning

confidence: 99%

“…In general, there are two methods used for the formation of silicon nanocrystals, one is the crystallization of nitrogen doped silicon (SiN x ) films [3] and the other is direct deposition [7] . Various fabrication techniques, such as plasma-enhanced chemical vapor deposition (PECVD) [2,8] , low-pressure chemical vapor deposition (LPCVD) [4] , and catalytic chemical vapor deposition (Cat-CVD) [1] have been examined for the fabrication of Si-nc in SiN x thin films with different silicon sources; i.e. SiH 4 [1,2,8] and Si 2 H 6 [4] .…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Control of SiNX Thin Film Surface Morphology Using Kinetic Monte Carlo Method

Bouhadiche¹,

Touam²

2018

Res. Rev. J Mat. Sci

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“…In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89-1.45, and to correlate with the N-H bond density. [4][5][6][7][8] In these reports, the charge storage ability is indirectly measured through measurement of the neutral K-center density using electron spin resonance ͑ESR͒. However, the defect density always remains highest in the most N rich films.…”

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confidence: 99%

Effect of deposition conditions and thermal annealing on the charge trapping properties of SiNx films

Ren

Weber

Nursam

et al. 2010

Applied Physics Letters

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A method for the analysis of multiphase bonding structures in amorphous SiO x N y films J. Appl. Phys. 97, 073518 (2005); 10.1063/1.1881774 Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiN x films and silicon substrate surface roughness on surface passivation J. Appl. Phys. 97, 063303 (2005); 10.1063/1.1861138Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

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Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

Cited by 22 publications

References 21 publications

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Modeling and Control of SiNX Thin Film Surface Morphology Using Kinetic Monte Carlo Method

Effect of deposition conditions and thermal annealing on the charge trapping properties of SiNx films

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