Si paste technology for high-efficiency solar cells

Hong, Juan; Xuan, Rongwei; Huang, Haojun; Geng, Qian; Wang, Wei

doi:10.1016/j.solener.2016.05.041

Cited by 10 publications

(3 citation statements)

References 23 publications

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“…Si paste was prepared using boron‐doped Si nanoparticles (Si nanoparticles) and an organic carrier with a weight ratio of 5:15 (high solid content) or 3:17 (low solid content), as shown in our previous study. [ 14 ] Si nanoparticles with a diameter of approximately 30 nm were crystalline. The organic carrier was composed of solvent and auxiliaries.…”

Section: Methodsmentioning

confidence: 99%

“…In these cases, improved efficiency was achieved on a 25 cm 2 area wafer. Hong et al [ 14 ] demonstrated the successful implementation of industrially feasible local B doping as an LBSF via Si paste technology to fabricate high‐efficiency solar cells, but an expensive picosecond laser was used for doping. For all the previous cases of LD of Si paste, the common critical aspects were the nonuniform irradiation of the Gaussian laser beam, the line pattern of the screening Si paste, and the rear‐textured Si wafers on which the paste was applied.…”

Section: Introductionmentioning

confidence: 99%

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Improved Localized Laser Doping of Boron‐Doped Si Paste for High‐Efficiency Solar Cells

Qian,

Shen,

Qian

et al. 2023

Energy Tech

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Laser doping (LD) of born‐doped Si paste (Si paste) is a potential boron‐doping approach for advanced solar cells. It is aimed to develop a top‐hat LD instead of a Gaussian LD and a rear‐side polishing process to fabricate P++ local contacts for improved passivated emitter and rear contact (i‐PERC) cells. With the help of vision alignment, LD is conducted on a dashed line pattern of printed Si paste, which decreases the consumption of paste. The variations of boron content in Si paste and the laser pulse energy density can help customize the doping profile. The predicted result of the boron LD profile is a peak dopant density of 2 × 1019 atoms cm−3 and a dopant depth of over 4.0 μm. When higher firing temperature, it can obtain thicker localized back surface field of over 7 μm, since the gradient of the residual Si concentration at the Al/Si interface can suppress the formation of voids. The overall increment in fill factor, short‐circuit current, and open‐circuit voltage enhances the average efficiency by 0.11% for i‐PERC cells and 0.09% for i‐bifacial PERC cells, respectively, due to the improved local contacts.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved Localized Laser Doping of Boron‐Doped Si Paste for High‐Efficiency Solar Cells

Qian,

Shen,

Qian

et al. 2023

Energy Tech

Self Cite

View full text Add to dashboard Cite

show abstract

“…High-efficiency solar cells have been recognized as a promising technology for addressing renewable and sustainable energy issues. [1][2][3] Recently, a large number of semiconductors including organic-inorganic hybrid perovskites, copper indium gallium selenide, copper zinc tin selenide, and binary antimony chalcogenides have been used as light-absorber materials in solar cell devices. [4][5][6][7][8][9] Among these materials, antimony trisulfide (Sb 2 S 3 ) has received intense investigation in the past decades and is regarded as one of the most promising candidates for solar energy materials due to its excellent environmental stability, high absorption coefficient (10 5 cm À1 ), suitable band gap (B1.7 eV) and low toxicity.…”

Section: Introductionmentioning

confidence: 99%