Si-rich/SiO
                  2
           nanostructured multilayers by reactive magnetron sputtering

Gourbilleau, Fabrice; Portier, X.; Ternon, C.; Voivenel, P.; Madelon, R.; Rizk, R.

doi:10.1063/1.1371794

Cited by 112 publications

(70 citation statements)

References 20 publications

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“…Among all the fabrication techniques reported in the literature for providing photoluminescent Sincl, the most original ways to control the Si grain size are: ͑i͒ the laser pyrolisis of silane leading to the creation of free Si nanocrystals 18 or ͑ii͒ the deposition of Si/ SiO 2 multilayers ͑MLs͒ in which the Si sublayer thickness should not exceed the critical value predicted by the QC model. [19][20][21][22] In addition to the control of the Si-ncl size, the ML approach offers the possibility to control the SiO 2 sublayer thickness, which is a key point for allowing the carrier transport through the multilayered structure.…”

Section: Introductionmentioning

confidence: 99%

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Gourbilleau

Ternon

Maestre

et al. 2009

Journal of Applied Physics

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Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2 J. Appl. Phys. 109, 084337 (2011) Si-rich-SiO 2 ͑SRSO͒ / SiO 2 multilayers ͑MLs͒ have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters ͑Si-ncls͒ within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient ␣ ͑in cm −1 ͒ has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.

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Section: Introductionmentioning

confidence: 99%

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Gourbilleau

Ternon

Maestre

et al. 2009

Journal of Applied Physics

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“…To further enhance the previous discussions on property-structure relationships, other microstructure characterization techniques such as TEM (Transmission Electron Microscopy) (Zhu et al 1995;Min et al 1996;Gourbilleau et al 2001;Werwa et al 1994;Inokuma et al 1998;lacona et al 2000) would be required in the future work. In particular, a special TEM technique named Energy Filtered Transmission Electron Microscopy (EFTEM) appears to be most promising (lacona et al 2004).…”

Section: Discussionmentioning

confidence: 99%

“…In this project, three other characterization techniques were utilized to enhance the previous discussions on property-structure relationships, including FTIR spectroscopy ( Other characterization techniques may be useful for the future directions of research on this topic, such as Transmission Electron Microscopy (TEM) (Transmission Electron Microscopy) (Zhu et al 1995;Min et al 1996;Gourbilleau et al 2001;Werwa et al 1994;Inokuma et al 1998;lacona et al 2000).…”

Section: Materials Characterizationmentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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“…A subsequent annealing at 1100°C results in segregation of Si and SiO 2 within the SRSO layer and allows defects in the SiO 2 matrix to repair. 13,14 The analyzed MLs, named as M1 to M6, consist of different numbers and thicknesses of ͑SRSO/ SiO 2 ͒ bilayers as indicated in Table I. The thickness of each individual layer is controlled by the deposition time under Ar or Ar +H 2 plasma.…”

Section: Methodsmentioning

confidence: 99%

Structural and optoelectronical characterization of Si–SiO2/SiO2 multilayers with applications in all Si tandem solar cells

Maestre

Palais

Barakel

et al. 2010

Journal of Applied Physics

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SiO 2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (102 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under “dark” or “illumination” conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.

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Si-rich/SiO 2 nanostructured multilayers by reactive magnetron sputtering

Cited by 112 publications

References 20 publications

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Structural and optoelectronical characterization of Si–SiO2/SiO2 multilayers with applications in all Si tandem solar cells

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