Si/Si<inf>1&#x2212;x</inf>Ge<inf>x</inf> nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit

Abstract

We propose a novel Si/Si 1-x Ge x nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10 -10 s to 2× 10 -8 s by barrier height engineering of the Si/Si 1-x Ge x superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.

Modification of carbon nanotubes with 4-mercaptobenzoic acid-doped polyaniline for quantum dot sensitized solar cells

“…As their power conversion efficiency may exceed the Shockley and Queisser limit, 1,2 quantum dots (QDs) 3,4 sensitized solar cells (QDSSCs) [5][6][7] have attracted enormous attention from both engineers and scientists over the past decade. So far, a major challenge for improving the performance of QDSSC has been focused on inhibiting electronic recombination.…”