Si/SiC Hybrid Switch for Improved Switching and Part-Load Performance

Mathieson, Ross; Judge, Paul D.; Finney, S.J.

doi:10.1109/compel49091.2020.9265711

Cited by 5 publications

(2 citation statements)

References 17 publications

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“…Also, differential pairs (mutual inductance MAB and MCD) are realized by setting the upper arm resistors RA, RC and lower arm resistors RB, RD on the opposite sides of dielectric layer. Then, ignoring other weak couplings, the differential current sensing signal is derived in (5):…”

Section: Demonstration Of the Inapplicability Of General Current Meas...mentioning

confidence: 99%

“…With switching sequence control of parallel connected Si and SiC devices, hybrid switch (HyS) achieves much lower power loss and cost, thus becoming a rising technology with limitless potentials under the background of global green energy [1]. Related researches were successively carried out from the concept of HyS being first raised in 2015 [2,3,4,5].…”

Section: Introductionmentioning

confidence: 99%

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Accurate current measurement method in high frequency hybrid switch test and application

Jiang,

Gao,

Gao

et al. 2024

IEICE Electron. Express

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Hybrid switch (HyS) consisting of Si IGBT and SiC MOSFET becomes increasingly popular due to its prominent advantages of low power loss and cost in clear energy era. However, the existing studies suffer from the current measurement methods due to the insertion inductance and inductive signal overshoot, which may lead to inaccurate measurements of loss, electrical stress and also limited performance of HyS at high switching frequencies. This paper conducts an in-depth study on the impact of inner loop inductance on HyS turn-off process. And an accurate current measurement method is proposed for high frequency HyS test and application, showing significant improvement in insertion inductance level and highbandwidth accuracy.

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Section: Demonstration Of the Inapplicability Of General Current Meas...mentioning

confidence: 99%