Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Chevalier, P.; Schröter, M.; Bolognesi, C.R.; d’Alessandro, V.; Alexandrova, Maria; Böck, J.; Flickiger, Ralf; Fregonèse, Sébastien; Heinemann, B.; Jungemann, C.; Lovblom, Rickard; Maneux, Cristell; Ostinelli, O.; Pawlak, Andreas; Rinaldi, N.; Rücker, H.; Wedel, G.; Zimmer, Thomas

doi:10.1109/jproc.2017.2669087

Cited by 95 publications

(33 citation statements)

References 101 publications

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“…Hydrogen related defects in GaInP/GaAs HBT have been evidenced, with complex kinetic affecting surface recombination and carbon passivation, which translates into enhancement and decrease periods on gain current β as reported in [20]. Advanced TCAD models have been developed to optimize the performance and the reliability for very high frequency application purpose [21,22]. The different trade-offs induced by the device size reduction in Si/SiGe and InP/GaAsSb HBTs (extrinsic to intrinsic base link due to lateral and vertical scaling), with isolation strategies (trench isolation) and the related increase of the thermal resistance RTH are considered together.…”

Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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SiGe and GaN technologies have achieved rapid development over the last two decades. High level of RF circuit integration on Si low cost substrates open the way for large development of SiGe HBTs, while needs for high power density make GaN HEMT a key technology for solid state power modules. As both of these technologies achieve very elevated frequencies, they become strong contenders to GaAs technologies. Then reliability studies are needed to improve the process at the lower technology readiness level scale, and to stabilize the technological process till the final qualification step. To make an efficient diagnostic on the causal origin of the physical root mechanisms involved during the application of a stress, a multi-tool approach is mandatory to secure the diagnostic. In this paper, case studies on SiGe HBT and GaN HEMT stressed devices are proposed through the cross-analysis of low frequency noise spectral densities, of electrical transient measurements, and of TCAD simulations.

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Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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“…Novel architectures and spatial combining of densely-packed devices, be they CMOS or SiGe, make such technologies highly-suited for use in sensing and imaging [44]. By combining HBTs and CMOS, high-performance THz front-ends with integrated digital circuitry are also possible [45], [46].…”

Section: Introductionmentioning

confidence: 99%

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Campion

Zirath

et al. 2019

IEEE Trans. THz Sci. Technol.

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“…HE growing demand for high-volume, high-speed wireless communication in terahertz (THz) applications has been sustained by aggressive miniaturization of electronic devices thus allowing increasing frequency of operation [1]. At the onset of 5G and beyond communication standards, monolithic integration of electronic and photonic technologies has become a viable solution, which employs cutting-edge high speed InP-based III-V HBTs [2].…”

Section: Introductionmentioning

confidence: 99%

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

Mukherjee

Couret

Nodjiadjim

et al. 2019

IEEE Trans. Electron Devices

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In this work we report a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flows through both the emitter metal layers and towards the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements.

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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Cited by 95 publications

References 101 publications

Non-destructive techniques for evaluating the reliability of high frequency active devices

Non-destructive techniques for evaluating the reliability of high frequency active devices

Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

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