Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)

Mrstik, B. J.; Rendell, R. W.

doi:10.1109/23.124081

Cited by 71 publications

(27 citation statements)

References 34 publications

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“…In addition, a hydrogen molecule can diffuse into a positively charged, puckered oxygen vacancy site and dissociate through the same reaction [96]. In this regard, Mrstik and Rendell [97] previously discarded oxygen vacancies as cracking sites at room temperature because "only about 25% of the oxide trapped charge formed during irradiation is removed even after very long exposure to hydrogen at room temperature." However, DFT calculations by Lu et al [3], [93] demonstrated that 80% of all oxygen vacancies in amorphous remain unpuckered upon hole capture.…”

Section: Eldrs In Bipolar Devices and Icsmentioning

confidence: 99%

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Shen

Puzyrev

Fleetwood

et al. 2015

IEEE Trans. Nucl. Sci.

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Density functional theory (DFT) has emerged as a powerful tool to model defect properties and dynamics at the quantum mechanical level. Results from targeted DFT calculations can provide valuable insight into the atomistic nature of radiation-induced defect phenomena in microelectronics. This review describes the foundations of DFT, its implementations, and defect calculations. Illustrative examples from recent studies are presented in which DFT calculations, combined with experiments, have led to new insights into the microscopic processes that lead to the observed radiation response. These include GaN/AlGaN HEMTs, proton-induced interface-trap formation at the interface, and the role of hydrogen in enhanced low-dose-rate sensitivity (ELDRS) in bipolar devices and ICs.

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Section: Eldrs In Bipolar Devices and Icsmentioning

confidence: 99%

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Shen

Puzyrev

Fleetwood

et al. 2015

IEEE Trans. Nucl. Sci.

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“…510 [11,15,16]. Експериментальні дані [15,17] свід-чать про багатофакторну участь водню у фор-муванні властивостей Si та SiO 2 .…”

Section: б п команunclassified

“…510 [11,15,16]. Експериментальні дані [15,17] свід-чать про багатофакторну участь водню у фор-муванні властивостей Si та SiO 2 . Однак, якщо для монокристалів Si ситуація вважається в достатніх межах зрозумілою [18], то участь водню у явищах переносу в SiO 2 та Si-SiO 2 є далека від розуміння.…”

Section: б п команunclassified

Effect of Combined X-Ray and Laser Pulse Radiation on the Parameters of Silicon Mos-Transistors

Koman¹

2012

SEMST

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“…[12]. Experiments have shown that under a positive field nearly all the + H produced in the oxide is ultimately converted to interface traps [13] [14].…”

Section: Model For Dose Rate Sensitivity Of Trapped Chargementioning

confidence: 99%

Total dose and dose rate models for bipolar transistors in circuit simulation.

Campbell¹,

Wix²

2013

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The objective of this work is to develop a model for total dose effects in bipolar junction transistors for use in circuit simulation. The components of the model are an electrical model of device performance that includes the effects of trapped charge on device behavior, and a model that calculates the trapped charge densities in a specific device structure as a function of radiation dose and dose rate. Simulations based on this model are found to agree well with measurements on a number of devices for which data are available. 4 ACKNOWLEDGMENTSThe authors are grateful to Nathan Nowlin for many helpful comments and for pointing us to important early references.5

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Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)

Cited by 71 publications

References 34 publications

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Effect of Combined X-Ray and Laser Pulse Radiation on the Parameters of Silicon Mos-Transistors

Total dose and dose rate models for bipolar transistors in circuit simulation.

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