Si/SiO2 core shell clusters probed by Raman spectroscopy

Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

“…Furthermore, while performing Raman mapping, we have also observed simultaneous occurrence of LW and HW phonons ~501 and ~ 517 cm −1 , respectively, at some spatial positions. Similar kind of observation is reported earlier by Faraci et al in Si–SiO 2 NCp. They have suggested that LWs may be due to Si aggregates having a thin SiO x (with x = 1–2) interface for Si NCs in SiO 2 matrix …”

“…Similar kind of observation is reported earlier by Faraci et al in Si–SiO 2 NCp. They have suggested that LWs may be due to Si aggregates having a thin SiO x (with x = 1–2) interface for Si NCs in SiO 2 matrix …”

Catalytic role of adsorbates in the photoluminescence emission of Si nanocrystals

“…The spectrum shows a behavior typical of Si nanocrystals 10 in air with a peak around 725 nm, characteristic of a size distribution around 2-5 nm as confirmed for these samples by our Raman measurements. 14 In the figure the significant growth of the yield is visible as the pressure increases, demonstrating the influence of the adsorption of foreign molecules from the ambient gases. We emphasize that the behavior shown in Fig.…”

“…The size distribution of the nanocrystals therefore is changing but we know that the quantum confinement is practically due to the smallest sizes ͑smaller than 5 nm͒. 14,15 This morphology was checked by x-ray photoemission investigation ͑see Fig. 1͒ and Raman spectroscopy.…”

Silicon rich oxide powders by HWCVD: Its optical and morphological properties

“…However, at lower temperatures, the vibration peak around 520 cm À1 disappears; which means that the powders are formed by amorphous agglomerates with a low density of Si-nc embedded, that they were not detected by this technique. Nevertheless, a relation of PL with Raman was calculated with the Bond Polarization Model [38,39]. This model was used to determine the shift in position of the vibrational mode of Si in Raman spectra and is described by the Eq.…”