Si<sub>3</sub> N<sub>4</sub> Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

Yang, Xianghong; Hu, Long; Liu, Jingliang; Duan, Xue; Li, Xin; Liu, Weihua; Han, Chuanyu

doi:10.1109/ted.2023.3238362

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…In recent years, researchers have conducted many studies on device failure mechanisms [33] and enhanced device lifetimes using techniques, such as plating [34,35] , changing electrode shapes, and modifying triggering methods [36,37] , which offer valuable references for improving device lifetimes. In the future, the power of combining those devices will be a vital pathway for finding practical applications for optical switching devices [38][39][40] .…”

Section: Introductionmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

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Section: Introductionmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Li,

Xiao,

Luan

et al. 2024

Journal of Applied Physics

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A novel high-power AlGaN/GaN heterojunction lateral photoconductive semiconductor switch (PCSS) based on the SiC substrate is proposed, which achieves high dark-state resistance characteristics by groove etching. Under the action of biased electric field and incident laser, a high concentration of two-dimensional electron gas is formed at the heterojunction interface. The photo-generated free carriers transport along the heterojunction interface, which improves the utilization efficiency of photo-generated carriers. Moreover, the simulation of the current density distribution of the PCSS provides theoretical support for this phenomenon. Compared with the conventional GaN PCSS, the power capacity and conduction characteristics are further improved. The test results show that the output current of the device increases significantly after the introduction of the AlGaN/GaN heterojunction. At the biased voltage of ∼34 kV, the maximum output current of the AlGaN/GaN PCSS reaches 205 A.

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Improved Photocurrent for Gallium Nitride Photoconductive Semiconductor Switch by SiO₂ Anti-Reflection and (SiO₂|Ta₂O₅)⁶ High-Reflection Dielectric Films

Yang

Huang

et al. 2023

IEEE Electron Device Lett.

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Si₃ N₄ Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

Cited by 7 publications

References 23 publications

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Improved Photocurrent for Gallium Nitride Photoconductive Semiconductor Switch by SiO₂ Anti-Reflection and (SiO₂|Ta₂O₅)⁶ High-Reflection Dielectric Films

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Si3 N4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

Cited by 7 publications

References 23 publications

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Improved Photocurrent for Gallium Nitride Photoconductive Semiconductor Switch by SiO2 Anti-Reflection and (SiO2|Ta2O5)6 High-Reflection Dielectric Films

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Si₃ N₄ Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

Improved Photocurrent for Gallium Nitride Photoconductive Semiconductor Switch by SiO₂ Anti-Reflection and (SiO₂|Ta₂O₅)⁶ High-Reflection Dielectric Films