Si-to-Si wafer bonding using evaporated glass

Abstract

SummaryAnodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300 "C to 450 "C. Altlhough annealing of Si/glass structures around 340 "C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed maximum bond strengths greater than 510 N/mm2 and an average bond strength of 30 N/mm2. The bond strength is independent of both th'e bonding temperature and the feature size. We observed no fracture at the actual bond interface.