Si3N4/fused quartz composite crucible with enhanced thermal conductivity for multicrystalline silicon ingot growth

Zhao, Lili; Lv, Tiezheng; Zhu, Qingsong

doi:10.1016/j.jcrysgro.2014.10.030

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…This will guarantee relatively large growth rate, low energy consumption, and flat melt-crystal interface shape. It is feasible to manufacture such a crucible by adjusting the porosity or using composited materials [13].…”

Section: Discussion On Choosing Crucible Thermal Conductivitymentioning

confidence: 99%

“…The crucible is labeled with No. 3 and its thermal conductivity can be easily changed by adjusting the porosity or using different materials [11,13]. The entire furnace is divided into a number of subdomains for simulation and the structured/unstructured combined mesh scheme is applied to improve the computation efficiency.…”

Section: Model Descriptionmentioning

confidence: 99%

“…The crucible thermal conductivity can be varied in a large range in different studies and for different materials [6,[9][10][11][12][13]17]. Besides, the crucible thermal conductivity can also be changed by adjusting the porosity.…”

Section: Model Descriptionmentioning

confidence: 99%

“…Schneider et al [12] reused the nitride bonded silicon nitride crucible for DS of silicon ingots and inferred that thermal conductivity can influence the growth interface shape. Zhao et al [13] even proposed a silicon nitride and quartz composited crucible to adjust the thermal conductivity and improve the crystal growth. These studies are helpful in understanding the important role of the crucible thermal conductivity, but they are not sufficient to reveal the influence of thermal conductivity on crystal growth through the entire DS process for industrialsize silicon ingots.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Liu

Zhang

et al. 2016

International Journal of Photoenergy

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We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

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Section: Discussion On Choosing Crucible Thermal Conductivitymentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%