SiC and GaN Power Devices

Zekentes, K.; Veliadis, Victor; Ryu, Sei‐Hyung; Vasilevskiy, K.; Pavlidis, Spyridon; Salemi, Arash; Zhang, Yuhao

doi:10.1007/978-3-031-21610-7_2

Cited by 2 publications

(2 citation statements)

References 191 publications

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“…Considering the etch depth profiles obtained from both samples, we could observe a contracting behaviour with decreasing pitch size. This decreasing pattern in the etching depth is due to the micro loading effect [18,19], which reduces the etch rate along with diminishing opening dimension due to transport limitations. Furthermore, the average root mean square (RMS) roughness obtained from the grating surface of 4H-SiC is less (0.09 nm) than the RMS value (0.45 nm) obtained for 6H-SiC.…”

Section: Resultsmentioning

confidence: 99%

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC

Mathew

Лебедев

Lebedev

et al. 2022

MSF

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A technical methodology of fabrication of hierarchically scaled multitude graphene nanogratings with varying pitches ranging from the micrometer down to sub 40 nm scale combined with sub 10 nm step heights on 4H and 6H semi-insulating SiC for length scale measurements is proposed. The nanogratings were fabricated using electron-beam lithography combined with dry etching of graphene, incorporating a standard semiconductor processing technology. A scientific evaluation of critical dimension, etching step heights, and surface characterization of graphene nanograting on both polytypes were compared and evaluated.

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Section: Resultsmentioning

confidence: 99%

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC

Mathew

Лебедев

Lebedev

et al. 2022

MSF

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“…In the RIE process, the applied pressure cannot be increased because the mean free path of the gas molecules should be long enough for ion acceleration. The processing rate is limited to approximately 1 μm/min due to the limited number of gas molecules contributing to the reaction (5). PCVM is a purely chemical etching process in which neutral radicals are employed as the active species.…”

Section: Introductionmentioning

confidence: 99%

(Invited) High-Speed Plasma Etching of SiC Wafer Toward Backside Thinning

Sano¹

2021

ECS Trans.

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The semiconductor silicon carbide (SiC) is a promising material for low-loss power devices. The development of a highly efficient strain-free process for the backside thinning of vertical power transistors is required due to its hard and brittle properties. Thus, plasma etching using high-pressure SF6 plasma was proposed, and it was found that a high-speed etching of the entire surface of a 2inch wafer at approximately 15 μm/min was possible. It was also demonstrated that the thickness of the commercially available 2inch wafer could be thinned to approximately 100 μm with only 20-min plasma etching, and larger-diameter wafers could be thinned at the same rate using the same rf power per unit area. Further, from the evaluation using commercial SiC MOSFET chips, it was confirmed that the backside thinning via this method does not affect the frontside devices.

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SiC and GaN Power Devices

Cited by 2 publications

References 191 publications

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC

(Invited) High-Speed Plasma Etching of SiC Wafer Toward Backside Thinning

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