SiC-based high electron mobility transistor

Abstract

This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm2/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C–SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.