SiC-capped nanotip arrays for field emission with ultralow turn-on field

Abstract

Silicon nanotips with tip diameter and height measuring 1 nm and 1 m, respectively, and density in the range of 10 9-3ϫ10 11 cm Ϫ2 , were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200°C. Field emission current densities of 3.0 mA/cm 2 at an applied field of ϳ1.0 V/m was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/m turn-on field to draw a 10 A/cm 2 current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices.

Synthesis and Raman scattering of β-SiC/SiO2 core–shell nanowires

“…It is well known that SiC nanowires/nanocables are particularly attractive due to their excellent mechanical strength, high-thermal conductivity, and potential application as functional ceramics, high-temperature semiconductors, or electron field-emitting devices [16][17][18]. Moreover, SiC/SiO 2 core-shell nanowires are expected to substitute for large-sized SiO 2 that act as the reinforcing phase in the rubber, which will improve the interface bonding intensity of the rubber and make full use of the role of SiC.…”

Low-temperature solution approach toward highly aligned ZnO nanotip arrays

“…For the field emitter arrays technologies, the manipulation of high density, vertical aligned and well-ordered fine tips are particularly desirable. Currently, developing high-performance field emitter mainly relies on materials with low work function and thermal stability under the high vacuum environment, such as carbon-based (carbon nanotubes, diamond-like carbon) [3], siliconbased (Si, SiN, SiCN) [4], oxide-based (MoO 2 , MoO 3 , ZnO) [5,6], and other semiconductor materials [7]. Among these materials, zinc oxide (ZnO) is a wide band-gap (3.4 eV) and large exciton binding energy (60 meV) semiconductor compound, which is useful for light emitting diodes, room-temperature nanolasers, gas sensors, piezoelectric devices, and solar cells [8], etc.…”

Controlled Irradiative Formation of Penitentes

“…Penitente formation alters glacial energy balances and therefore affects local water runoff and flooding, feedback in climate dynamics, and paleo-climatic reconstruction [4,5]. In materials science, surface micropatterning via laser ablation can produce problematic surface roughness [6,7], but also has several proposed applications, including improved solar cells and electron-field emitters [8,9].…”