SiC Device Applications: Identifying and Developing Commercial Applications

High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10-6A/cm2 at the bias voltage of-1000V has been obtained. The forward on-state current was 1A at VF = 2.2V. The chip is 1.3mm×1.3mm. The turn-on voltage is about 1.4V. The on-state resistance is 14.5mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a SMB package. The thickness of the N-epilayer is 10μm, and the doping concentration is 4×1015cm3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using WTi/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

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“…Further study is to optimize the fabrication in order to get a lower reverse leakage and higher forward current. [4]…”

Section: Discussionmentioning

confidence: 99%

Development of 1000V SiC JBS Diodes

Chen

Wang²,

Huang³

et al. 2013

AMR

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“…The introduction of first products (Schottky barrier diodes) occurred in 2001 by Infineon and Cree. Even considering the higher device price, the implementation in systems could be realized also from an economical point of view due to the achievable system advantages (1). The use of SiC components is mainly triggered by the possibility to achieve higher power densities for power conversion systems via higher switching frequencies.…”

Section: Introductionmentioning

confidence: 99%

SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance

Friedrichs¹

2009

ECS Trans.

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The paper summarizes important challenges in manufacturing silicon carbide based power devices on an industrial scale. Special emphasize is paid to processes which differ considerably from well know silicon power device process flows and processing conditions. In general, higher temperatures used in the processing of silicon carbide devices represent a challenge for both, equipment manufacturers and device design experts. The main topics discussed in the contribution are processes for annealing ion implanted species, the formation of ohmic contacts as well as the crucial question of forming high quality interfaces between SiC and insulating materials for MOS based power devices structures. Finally, progress will be presented how to suppress the forward drift effects in silicon carbide high voltage bipolar devices in order to open up a commercial future for this device family.

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“…Such a high-performance electric system requires power devices capable of handling a large amount of electric power. The required current capacity is at least 100A [2]. The required defect density of a SiC wafer for the production of such large devices may be less than 0.5cm -2 .…”

Section: Introductionmentioning

confidence: 99%

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

Hatakeyama

Ichinoseki²,

Higuchi

et al. 2008

MSF

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There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as “particles”.

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SiC Device Applications: Identifying and Developing Commercial Applications

Cited by 10 publications

References 14 publications

Development of 1000V SiC JBS Diodes

Development of 1000V SiC JBS Diodes

SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

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