SiC devices for advanced power and high-temperature applications

Wondrak, W.; Held, R.; Niemann, E.; Schmid, U.

doi:10.1109/41.915409

Cited by 92 publications

(25 citation statements)

References 8 publications

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“…Samples I60, I150, and I720 were irradiated substrates oxidized in the same temperature and pressure conditions as samples N360 for 60, 150, and 720 min, respectively ͑see Table I͒. RBS in channeling geometry (c-RBS͒ analyses ͑detection angle was 170°) were performed in a 3 MV HV Tandetron ion accelerator with 2 MeV He ϩ ions aligned in the ͗0001͘ crystal axis in order to determine the oxide thickness in different samples and to infer about the residual damage in the SiC substrate. The areal density of O in the films was determined from the areas of the corresponding O signals in the RBS spectra, calibrated against a SiO 2 Table I. After this procedure, the oxide surface morphology of the different samples was probed using AFM, performed on a Digital Instruments Nanoscope IIIa in tapping mode.…”

Section: Methodsmentioning

confidence: 99%

“…1,2 This is due to certain properties of this material including wide band gap, high breakdown electric field, high thermal conductivity and high-saturated electron drift velocity. 3,4 However, the feature that really sets SiC apart from other wide band-gap semiconductors is the possibility of growing a well-known dielectric film on this material by thermal oxidation, namely, SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

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Effects of ion irradiation in the thermal oxidation of SiC

2002

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We investigated the thermal growth of SiO 2 films on 6H-SiC ͑0001͒ samples irradiated with 170 keV Ar ϩ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results are compared to those of nonirradiated substrates, revealing major differences due to ion bombardment such as the enhanced rate of oxidation, the variation of roughness of both oxide surface and SiO 2 /SiC interface, and of the stress in the formed oxide layer. Modifications on the electronic structure and crystallographic characteristics of the substrate underneath the oxide were also observed in samples in which the ion irradiation damaged layer was only partially consumed by the oxidation step. The present work evidences that a careful choice of sample preparation conditions is necessary to avoid undesired characteristics in the final SiO 2 /SiC structure and points to a way of preventing irradiation related degradation of electrical characteristics while maintaining the high oxidation rate.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of ion irradiation in the thermal oxidation of SiC

2002

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“…1,2 However, ion implantation during device fabrication, as well as heavy-ion irradiation in space application will inevitably induce displacement defects. Such defects can undergo migration, recombination and aggregation in the long term, leading to degradation in electronic, [3][4][5] and thermal 6,7 properties as well as dimensional instability.…”

Section: Introductionmentioning

confidence: 99%

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Guo

Martín-Bragado

et al. 2014

Journal of Applied Physics

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Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the long-term evolution of displacement damage induced by heavy-ion irradiation in cubic silicon carbide. The isochronal annealing after heavy ion irradiation is simulated, and the annealing behaviors of total interstitials are found consistent with previous experiments. Two annealing stages below 600K and one stage above 900K are identified. The mechanisms for those recovery stages are interpreted by the evolution of defects. The influence of the spatial correlation in primary damage on defect recovery has been studied and found insignificant when the damage dose is high enough, which sheds light on the applicability of approaches with mean-field approximation to the long-term evolution of damage by heavy ions in SiC.

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“…This is because the upper limit of operating temperature for Si power devices has been increased from 125 °C towards 200 °C, and those for wide-band gap power devices (i.e. SiC and GaN power devices) are even higher [1]- [5]. Due to the epoxy matrix, conductive adhesives degrade at temperatures above 177 °C, and are mainly used for die attachments where conditions are below 70 °C.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Microstructure Characterization of Ag Nanoparticle Sintered Joints for Power Die Attachment

Wang

Agyakwa

et al. 2014

Molecular Crystals and Liquid Crystals

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The samples of sintered Ag joints for power die attachments were prepared using paste of Ag nanoparticles at 240 °C and 5 MPa for 3 to 17 minutes. Their microstructural features were quantitatively characterized with scanning electronic microscopy, transmission electron microscopy, X-ray diffraction and image analysis method. The resulting normalized thickness, pore size and porosity decreased, and grain size increased with increasing the sintering time. A time dependence of the form t 1/n with n close to 2 or 3 can be further derived for the kinetics of the thinning, densification and grain growth within the sintered Ag joints.

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SiC devices for advanced power and high-temperature applications

Cited by 92 publications

References 8 publications

Effects of ion irradiation in the thermal oxidation of SiC

Effects of ion irradiation in the thermal oxidation of SiC

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Quantitative Microstructure Characterization of Ag Nanoparticle Sintered Joints for Power Die Attachment

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