SiC Devices for Renewable and High Performance Power Conversion Applications

Abuishmais, Ibrahim; Undeland, Tore

doi:10.1155/2012/765619

Cited by 10 publications

(6 citation statements)

References 15 publications

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“…It can be noted that boron-doped diamond (p-type diamond) shows a better trade-off only for HT (b). Data taken from [11][12][13][14][15][16][17][18][19][20][21] and references therein.…”

Section: Doping and Defectsmentioning

confidence: 99%

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Donato

Rouger

Pernot

et al. 2019

J. Phys. D: Appl. Phys.

184

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With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics.

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“…It can be noted that boron-doped diamond (p-type diamond) shows a better trade-off only for HT (b). Data taken from [11][12][13][14][15][16][17][18][19][20][21] and references therein.…”

Section: Doping and Defectsmentioning

confidence: 99%

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Donato

Rouger

Pernot

et al. 2019

J. Phys. D: Appl. Phys.

184

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“…Furthermore, in recent times, the price of the SiC devices has dropped markedly so that they are more and more competitive with respect to the conventional Si devices. A cross examination of the main characteristics of Si and SiC devices is reported in [5][6][7][8][9][10][11].…”

Section: Sic Devicesmentioning

confidence: 99%

“…Recent advancements in wide bandgap (WBG) devices fabrication, especially for the silicon carbide (SiC) devices, have led to the development of high-voltage power transistors with short switching time and low conduction resistance [5,6]. Consequently, appreciable improvement in the propulsion inverter efficiency is expected if built up with SiC devices, such as the SiC MOSFETs, instead of with silicon (Si) IGBTs, owing to the reduction of both switching and conduction losses [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

Kumar¹,

Bertoluzzo

Buja

et al. 2017

Advances in Power Electronics

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One of the emerging research topics in the propulsion drive of the electric vehicles is the improvement in the efficiency of its component parts, namely, the propulsion motor and the associated inverter. This paper is focused on the efficiency of the inverter and analyzes the improvement that follows from the replacement of the silicon (Si) IGBT devices with silicon carbide (SiC) MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the working torquespeed plane of the propulsion motor. Then, a proper model of the power losses in the inverter over a supply period of the motor is formulated for the two types of device, including the integrated freewheeling diode. By putting together the voltage-current solicitations and the device power losses, the efficiency maps of the Si IGBT and SiC MOSFET inverters are calculated and compared over the torque-speed plane. The results for the Si IGBT inverter are supported by measurements executed on a marketed C-segment compact electric car, while the SiC MOSFET loss model is validated by an on-purpose built test bench. Finally, the overall efficiency of the propulsion drive is calculated by accounting for the motor efficiency. Main outcomes of the paper is a quantitative evaluation of both the improvement in the efficiency achievable with the SiC MOSFETs and the ensuing increase in the electric car range.

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“…When using wide bandgap materials, several energy-related benefi ts will result in a greener environment by eliminating up to 90% of power losses currently occurring during electric conversion. 13 Wide bandgap devices can operate at a voltage 10 times higher than Si-based power devices, because of their higher maximum electric fi eld and operating temperatures of well over 300°C, twice the maximum operating temperature of Si-based devices. Theoretically, the operating frequency is at least 10 times higher, thereby opening up a range of new applications, such as compact radio frequency amplifi ers.…”

Section: Applications and Fi Gures Of Meritmentioning

confidence: 99%

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

et al. 2015

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IntroductionPower electronics is the branch of electronics specifi cally dealing with collecting, delivering, and storing energy, including general and local/commodity energy supplies, by conversion and control of electrical power.1 Specifi c applications range from power supply systems to motor vehicle drives, 2 photovoltaic and fuel cell converters, inverters, and high-frequency heating, 3 among many others. The impact of power electronics has already been signifi cant and is anticipated to be even more so in the future for effi cient energy production and management.As in most other electronics areas, silicon also has been the predominant semiconductor in power electronics to date. However, with wide bandgap materials power electronic components are faster, smaller, more effi cient, and more reliable than their Si-based counterparts. Moreover, they permit the operation of devices at higher voltages, temperatures, and frequencies, 4 making it possible to reduce volume and weight in a wide range of applications. This could lead to large energy savings in industrial and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and integrate renewable energy into the electric grid.The power electronics market as a whole was about $20 billion in 2012, and power electronics will remain one of the most attractive branches of the semiconductor industry over the next decade. 5 The latest power electronics market forecasts 6 predict an increase of 60% for low-voltage technologies (below 900 V) by the year 2020, accompanied by an approximately 100% market increase for medium (1.2-1.7 kV) and high voltage (2 kV and above) technologies. This implies that the largest market increase in this sector over the next decade (medium and high voltage) will rely on semiconductor technologies beyond silicon (also see article by Okumura in this issue). This can be likened to a second revolution, equivalent to the introduction of large scale fabrication of silicon complementary metal oxide semiconductor (CMOS) technology, which led to the commoditization of electronics and formed the basis of our modern technological era. The power electronics revolution could be setting the basis for a world centered on greener technologies: improved energy conversion effi ciencies, faster switching, and more compact, lighter systems with better thermal management and tolerance will have tremendous impact on industrialization and energy systems, encompassing energy savings, renewable energy systems, and Greener technologies for more effi cient power generation, distribution, and delivery in sectors ranging from transportation and generic energy supply to telecommunications are quickly expanding in response to the challenge of climate change. Power electronics is at the center of this fast development. As the effi ciency and resiliency requirements for such technologies can no longer be met by silicon, the research, development, and industrial implementation of wide bandgap semiconductors such as gallium nitride (GaN) and sil...

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SiC Devices for Renewable and High Performance Power Conversion Applications

Cited by 10 publications

References 15 publications

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

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