SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

Abstract

This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [112̄0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 °C and 104 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×1014 cm−3 obtained by C–V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

“…7,8) In particular, during the last decade, many publications treated about the use of the aluminium/titanium (Al/Ti) alloy for fabrication of highperformance Schottky diodes. [9][10][11][12] The current-voltage (I-V ) characteristics of Schottky barrier diodes (SBDs) measured at room temperature do not provide detailed information about the nature of the barrier and the charge transport processes at the metal-semiconductor (MS) interface. On the contrary, the temperature-dependent I-V behaviours are useful for giving a better understanding of the conduction mechanisms through the MS interface.…”

The double Gaussian distribution of inhomogeneous barrier heights in the organic‐on‐inorganic Schottky devices

“…The most important feature characterizing a Schottky barrier is its barrier height Φ B . Recently, considerable attention has been focused on the barrier height inhomogeneity in the Schottky devices 1–28. Several methods and approximations have been proposed to explain the formation of barrier from different materials including inorganic and/or organic interfaces and also to specify the behaviour of barriers at different bias and environmental conditions.…”

“…The performance and reliability of organic based Schottky barrier diodes especially depends on the formation of organic interfacial layer at metal–semiconductor (MS) interface and also on inhomogeneities of the Schottky barrier formation at MS interface 17–28. The existence of such an organic layer can have a strong influence on diode characteristics.…”

“…The existence of such an organic layer can have a strong influence on diode characteristics. Therefore, it is important to determine the interface and barrier properties of such an organic based Schottky device 17–28.…”

Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

“…The main application areas of the SiC based device include wireless technologies, high efficiency switches for power distribution, metal-semiconductor (MS) Schottky barrier diodes with and without interfacial layer, harsh environment sensors, and automobile industry. Consequently, a great deal of research effort has been put into the study on SiC semiconductor in the last two decades [10][11][12][13][14]. Today, silicon carbide (SiC) is also of great interest especially for high-power, high-temperature, and high-radiation hardness [2][3][4][5][6][10][11][12][13][14].…”