SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery

Thirumalai, R.; Krishnan, Bharat; Davydov, Albert V.; Merrett, J. Neil; Koshka, Yaroslav

doi:10.1557/jmr.2012.208

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…The flexibility of controlling the catalyst nanoparticle density makes this technique suitable for NW growth on horizontal surfaces as well as on patterned SiC substrates, including the vertical sidewalls of SiC mesas. These results will be reported elsewhere [10].…”

Section: Discussionsupporting

confidence: 72%

Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

Thirumalai

Krishnan

Davydov

et al. 2013

MSF

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A method was developed for growing SiC nanowires without depositing a metal catalyst on the targeted surfaces prior to the CVD growth. The proposed method utilizes in-situ vapor-phase catalyst delivery via sublimation of the catalyst from a metal source placed in the hot zone of the CVD reactor, followed by condensation of the catalyst-rich vapor on the bare substrate surface to form the catalyst nanoparticles. The vapor-phase catalyst delivery and the resulting nanowire density was found to be influenced by both the gas flow rate and the catalyst diffusion through the boundary layer above the catalyst source. The origin of undesirable bushes of nanowires and the role of the C/Si ratio were established.

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Section: Discussionsupporting

confidence: 72%

Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

Thirumalai

Krishnan

Davydov

et al. 2013

MSF

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“…The method was applied to grow individual NWs not only on the top substrate surface but also on vertical sidewalls of SiC mesas in order to investigate NW polytype and substrate-dependent orientation of the NW growth axes. More details of this method are presented elsewere 30 .…”

Section: Resultsmentioning

confidence: 99%

Orientation, alignment, and polytype control in epitaxial growth of SiC nanowires for electronics application in harsh environments

et al. 2013

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SiC nanowires (NWs) are attractive building blocks for the next generation electronic devices since silicon carbide is a wide bandgap semiconductor with high electrical breakdown strength, radiation resistance, mechanical strength, thermal conductivity, chemical stability and biocompatibility. Epitaxial growth using metal-catalyst-based vapor-liquid-solid mechanism was employed for SiC NW growth in this work. 4H-SiC substrates having different crystallographic orientations were used in order to control NW alignment and polytype. A new technique based on vapor-phase delivery of the metal catalyst was developed to facilitate control of the NW density. Both 4H and 3C polytypes with a strong stacking disorder were obtained. The 4H and 3C NWs had different orientations with respect to the substrate. 4H NWs grew perpendicular to the c-plane of the substrate. The stacking faults (SFs) in these nanowires were perpendicular to the [0001] nanowire axes. All 3C NWs grew at 20° with respect to the substrate c-plane, and their projections on the c-plane corresponded to one of the six equivalent ⟨101-0⟩ crystallographic directions. All six orientations were obtained simultaneously when growing NWs on the (0001) substrate surface, while only one or two NW orientations were observed when growing NWs on any particular crystallographic plane parallel to the c-axis of the substrate. Growth on {101-0} surfaces resulted in only one NW orientation, thereby producing well-aligned NW arrays. Preliminary measurements of the NW electrical conductivity are reported utilizing two-terminal device geometry.

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