2017
DOI: 10.4028/www.scientific.net/msf.897.701
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SiC Power Devices in Impedance Source Converters

Abstract: This paper discusses issues related to application of SiC power devices to new family of power converters. Impedance source converters show unique feature, buck boost characteristics due to specific impedance network. Passive elements of this network may be seriously reduced with the switching frequency increase, possible with fast-switching SiC transistors. On the other hand, switching conditions of the power devices are more severe than in traditional voltage-source or current-source converters. These issues… Show more

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“…On the other hand, normally‐ON JFET has a voltage‐controlled gate. Applications such as current‐source and impedance‐source inverters [23–25], high‐power modular multilevel converters [26] and DC circuit breakers can benefit from using normally‐ON SiC JFETs [27]. However, the normally‐ON characteristics of SiC JFETs impose severe driving challenges when employed in power converters.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, normally‐ON JFET has a voltage‐controlled gate. Applications such as current‐source and impedance‐source inverters [23–25], high‐power modular multilevel converters [26] and DC circuit breakers can benefit from using normally‐ON SiC JFETs [27]. However, the normally‐ON characteristics of SiC JFETs impose severe driving challenges when employed in power converters.…”
Section: Introductionmentioning
confidence: 99%