SiC Power Modules for Traction Inverters in Automotive Applications

Mauromicale, Giuseppe; Raciti, A.; Rizzo, Santi Agatino; Susinni, Giovanni; Abbatelli, Luigi; Buonomo, S.; Cavallaro, Daniela; Giuffrida, Vittorio

doi:10.1109/iecon.2019.8927366

Cited by 15 publications

(10 citation statements)

References 40 publications

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Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

“…Spider diagrams comparing the parameters of Si with those of SiC and GaN are shown in Figure 2 [43]. Despite the advantages of WBG devices and their decreasing cost, it should be noted that they are still more expensive than conventional semiconductors [44]. The most developed and widespread WBG devices are those using gallium nitride (GaN) [45][46][47][48] and silicon carbide (SiC) [32,44,[49][50][51][52] semiconductors.…”

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

“…Despite the advantages of WBG devices and their decreasing cost, it should be noted that they are still more expensive than conventional semiconductors [44]. The most developed and widespread WBG devices are those using gallium nitride (GaN) [45][46][47][48] and silicon carbide (SiC) [32,44,[49][50][51][52] semiconductors. These two types of WBG devices are becoming increasingly popular in the field of EVs due to their higher blocking voltage, frequency, and operation temperature [53,54].…”

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

“…The most developed and widespread WBG devices are those using gallium nitrid (GaN) [45][46][47][48] and silicon carbide (SiC) [32,44,[49][50][51][52] semiconductors. These two types o WBG devices are becoming increasingly popular in the field of EVs due to their highe blocking voltage, frequency, and operation temperature [53,54].…”

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

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A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

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Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

Section: Wide-bandgap Semiconductorsmentioning

confidence: 99%

See 2 more Smart Citations

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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“…The diversity of both technological development and the regional focus for specific applications has led to commercial and policy drivers resulting in major advances. Examples of this impact include the transformation of the Japanese high speed railway network towards using SiC devices [3], the use of SiC devices in Aerospace and Automotive [4] [5] [6] [7], the explosion of GaN devices in low voltage consumer and lighting applications and the potential for very high efficiency and thermally optimal power electronics in distributed generation systems [8].…”

Section: Introductionmentioning

confidence: 99%

The Impact of ITRW: How Can WBG Power Semiconductors Break Through?

Ferreira

Wilson

2021

IEEE Open J. Power Electron.

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Increasing electrification means the world will need a projected total of 1000 TW-units per year in the next 10 years+. A new generation of wide bandgap power electronics devices are potentially 100-1000 times faster and 100-1000 lower loss than today's technology. Current market projections of massive growth (30%+) for WBG technology and market size into the 10s of $Billions mean that this is a vitally important technology that will shape the next several decades of the world. A key role of the International Technology Roadmap for Wide bandgap Power Semiconductors (ITRW) is to facilitate an acceleration in the R&D process for this new technology to fulfil its potential. This paper takes a holistic view of the future of wide bandgap power electronics, the challenges that needs to be addressed and how roadmaps can make a contribution to meeting these challenges.

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A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

Shi

Ramones

Liu

et al. 2023

IET Power Electronics

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Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and are considered the next evolutionary step for future electric drives. The application of SiC MOSFETs in the field of electrified vehicles has brought many benefits, such as higher efficiency, higher power density, and simplified cooling system, and can be seen as an enabler for high‐power fast battery charging. This article reviews the benefits of SiC MOSFETs in different electrified vehicle (EV) application scenarios, including traction inverters, on‐board converters, and off‐board charging applications. However, replacing Si‐IGBTs with SiC MOSFETs introduces several new technical challenges, such as stronger electromagnetic interference (EMI), reliability issues, potential electric machine insulation failure due to high transient voltages, and cooling difficulties. Compared to mature silicon‐based semiconductor technologies, these challenges have so far hindered the widespread adoption of SiC MOSFETs in automotive applications. To fully exploit the advantages of SiC MOSFETs in automotive applications and enhance their reliability, this paper explores future technology developments in SiC MOSFET module packaging and driver design, as well as novel electric machine drive strategies with higher switching frequencies, and optimized high‐frequency machine design.

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SiC Power Modules for Traction Inverters in Automotive Applications

Cited by 15 publications

References 40 publications

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

The Impact of ITRW: How Can WBG Power Semiconductors Break Through?

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

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